MOSFET can be used as a

1.   Current controlled capacitor

2.  Voltage controlled capacitor

3.  Current controlled inductor

4.  Voltage controlled inductor

View Answer  
4
Correct Answer :

Voltage controlled capacitor


Explanation :
No Explanation available for this question

 If a hole is bored along the diameter of the earth and a stone is dropped into hole.

1.  The stone reaches the centre of earth and stops there

2.  The stone reaches the other side of earth and stops there

3.  The stone reaches the other side of earth and escapes  into space

4.  The stone executes simple harmonic motion about the; centre of the earth

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4
Correct Answer :

The stone reaches the other side of earth and stops there


Explanation :
No Explanation available for this question

If the transistor in the figure is in saturation then

1.   IC is always equal to βdcIB

2.  IC is always equal to -βdcIB

3.  IC is greater than or equal to βdcIdc

4.   IC is always equal to βdcIB

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4
Correct Answer :

IC is always equal to βdcIB


Explanation :
No Explanation available for this question

For a BJT, the common-base current gain α=0.98 and the collector base junction reverse bias saturation current Ico=0.6μA. This BJT is connected in the common emitter mode and operated in the accretive mode and operated in the active region with a base drive current IB=20μA.The collector current IC for the mode of operative is

1.  0.98 mA

2.  0.99 mA

3.   1.0 mA

4.  1.01 mA

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4
Correct Answer :

1.01 mA


Explanation :
No Explanation available for this question

In a uniformly doped BJT, assume that NE, NB and NC are the emitter base and collector doping in atomos/cm3 respectively. If the emitter injection efficiency of the BJT is close to unity which one of the following is true

1.  NE=NB=NC

2.  NE>>NB and NB>NC

3.  NE=NB and NB

4.  NE

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4
Correct Answer :

NE>>NB and NB>NC


Explanation :
No Explanation available for this question

Register renaming is done in pipelined processors

1.  As an alternative to register allocation at compile time

2.  For efficient access to function parameters and local variables

3.  To handle certain kinds of hazards

4.  As part of address translation

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4
Correct Answer :

For efficient access to function parameters and local variables


Explanation :
No Explanation available for this question

The channel resistance when VGS=0V is

1.   480 Ω

2.  600 Ω

3.  750 Ω

4.  1000 Ω

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4
Correct Answer :

750 Ω


Explanation :
No Explanation available for this question

The channel resistance when VGS=-3V is

1.   360 Ω

2.  917 Ω

3.  1000 Ω

4.  3000 Ω

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4
Correct Answer :

1000 Ω


Explanation :
No Explanation available for this question

It is required to use a JFET of Fig. below as a linear resistor. The parameters of the JFET are as follows: W=100 μm, L=10 μm, a=2.5 μm. The doping in the n-layer is ND=1016/Cm3 and the electron mobility is 1500cm2/V-sec. the depletion due to the built in potential is .25μm. the two p+ gate regions are connected together externally. The resistances of the regions outside the gate are neglitable, determine the minimum value of the linear resistor minimum value of the linear resistor which can be realized using this JFET without forward biasing the gate junctions

1.   50.12 Ω

2.  55.55 Ω

3.  51.12 Ω

4.  53.12 Ω

View Answer  
4
Correct Answer :

55.55 Ω


Explanation :
No Explanation available for this question

In the circuit shown below. For the MOs transistors μn Cox=100μ A/V2 and the threshold voltage VT=1V. The voltage Vx at the source of the upper transistor is

1.  1V

2.  2V

3.  3V

4.  3.67V

View Answer  
4
Correct Answer :

3V


Explanation :
No Explanation available for this question
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