1. a. 2.25X1012/m3, b. 4.80X10-5Ω-m, c. 0.228 ev
2. a. 2.00X1012/m3, b. 4.00X10-5Ω-m, c. 0.200 ev
3. a. 1.25X1012/m3, b. 3.15X10-5Ω-m, c. 0.15 ev
4. a. 1.00X1012/m3, b. 3.00X10-5Ω-m, c. 0.11 ev
a. 2.25X1012/m3, b. 4.80X10-5Ω-m, c. 0.228 ev
1. The depletion capacitance increases with increase in the reverse bias
2. The depletion capacitance decreases with increase in the reverse bias
3. The depletion capacitance increases with increase in the forward bias
4. The depletion capacitance much higher than the depletion capacitance when it is forward biased
The depletion capacitance decreases with increase in the reverse bias
1. Increases by 60 mV
2. Deceases by 60 mV
3. Increases by 25 mV
4. Decreases by 25 mV
Decreases by 25 mV
1. Reverse bias region below the breakdown voltage
2. Reverse breakdown region
3. Forward bias region
4. Forward bias constant current mode
Reverse breakdown region
1. Injection and subsequent diffusion and recombination of minority carriers
2. Injection and subsequent drift and generation of minority carriers
3. Extraction, and subsequent diffusion and generation of minority carriers
4. Extraction, and subsequent drift and recombination of minority carriers
Injection and subsequent diffusion and recombination of minority carriers
1. 0.25
2. 0.5
3. 1.0
4. 2.0
0.25
1. 10
2. 0.1
3. 0.01
4. 100
0.1
1. 125 and 125
2. 125 and 250
3. 250 and 125
4. 250 and 250
125 and 250
1. sin ωt
2. (sin ωt +|sin ωt|)/2
3. (sin ωt-|sin ωt|)/2
4. 0 for all t
0 for all t
1. (a)32.68 mV, (b).0.99 pA
2. (a)30.68 mV, (b).0.55 pA
3. (a)32.00 mV, (b).0.44 pA
4. (a)30.00 mV, (b).0.33 pA
(a)32.68 mV, (b).0.99 pA