# For a MOs at T=300K the maximum space charge density is 7.5*10-9c/cm2 The surface potential that result in maximum space charge width is

1.  0.512

2.  0.259V

3.  0.259V

4.  -0.518V

5.  45

6.  46

7.  47

8.  None of these

9

46

Explanation :
No Explanation available for this question

# In a n-type Si MOS structure a metal semiconductor work function difference of The gate voltage is

1.  4.8V

2.  5.6V

3.  4.4V

4.  5V

4

5.6V

Explanation :
No Explanation available for this question

# In a n-type Si MOS structure a metal semiconductor work function difference of The value of conduction parameter is

1.

2.

3.

4.

4

Explanation :
No Explanation available for this question

# In a n-type Si MOS structure a metal semiconductor work function difference of φm=-0.5V is required If gate is n+ polysilicon, silicon doping is

1.  4*1013cm-3

2.  1.254*1013cm

3.  4.802*1013cm-3

4.  1.254*1013cm-3

4

1.254*1013cm

Explanation :
No Explanation available for this question

# In a n-type Si MOS structure a metal semiconductor work function difference of φm=-0.5V is required If gate is n+ polysilicon, requires silicon doping is

1.  8*1011cm-3

2.  8*1013cm-3

3.  8 *1015cm-3

4.  Cannot use p+ polysilicon gate

5.  All three

6.  A and B only

7.  A and C only

8.  None of these

8

All three

Explanation :
No Explanation available for this question

# In a n-channel MOSFET, the parameters are Vt=0.1V,Kn0.2mA/V2 If Vss=5V and VDs==6V, then ID is

1.  0.2mA

2.  0.8mA

3.  3.2mA

4.  7.2mA

5.  50

6.  70

7.  30

8.  90

8

30

Explanation :
No Explanation available for this question

# In a n-channel MOSFET, the parameters are Vt=0.1V,Kn0.2mA/V2 If VGS=5V and VDs==2V, then ID is

1.  2.4mA

2.  4.8mA

3.  2.8mA

4.  4.2mA

5.  3

6.  4

7.  5

8.  6

9.  2

9

3

Explanation :
No Explanation available for this question

# The forward current of ap-n junction Ge diode if the temperature is 270C and reverse saturation current is 1 for an applied forward bias of 0.2V is

1.  3.5mA

2.  2.27mA

3.  5mA

4.  8.21mA

5.  1

6.  2

7.  0

8.  4

9.  2

9

1

Explanation :
No Explanation available for this question

# The forward current of ap-n junction Ge diode if the temperature is 270C and reverse saturation current is 1 for an applied forward bias of 0.2V is Hence find the static resistance of the diode

1.  150Ω

2.  75 Ω

3.  88Ω

4.  Data insufficient

5.  364

6.  2254

7.  2954

8.  3234

9.  2884

9

2954

Explanation :
No Explanation available for this question

# A vacuum diode with internal resistance 200Ω is connected to a 1Ω load and 300 volts source of supply .The PIV of the diode is 400V The peak current value is

1.  500mA

2.  353mA

3.  162mA

4.  Data insufficient

5.  36

6.  37

7.  38

8.  39

9.  None of these

9