For a MOs at T=300K the maximum space charge density is 7.5*10-9c/cm2 The surface potential that result in maximum space charge width is

1.  0.512

2.  0.259V

3.  0.259V

4.  -0.518V

5.  45

6.  46

7.  47

8.  None of these

9.  Data inadequate

View Answer  
9
Correct Answer :

46


Explanation :
No Explanation available for this question

In a n-type Si MOS structure a metal semiconductor work function difference of The gate voltage is

1.  4.8V

2.  5.6V

3.  4.4V

4.  5V

View Answer  
4
Correct Answer :

5.6V


Explanation :
No Explanation available for this question

In a n-type Si MOS structure a metal semiconductor work function difference of The value of conduction parameter is

1.  

2.  

3.  

4.  

View Answer  
4
Correct Answer :


Explanation :
No Explanation available for this question

In a n-type Si MOS structure a metal semiconductor work function difference of φm=-0.5V is required If gate is n+ polysilicon, silicon doping is

1.  4*1013cm-3

2.  1.254*1013cm

3.  4.802*1013cm-3

4.  1.254*1013cm-3

View Answer  
4
Correct Answer :

1.254*1013cm


Explanation :
No Explanation available for this question

In a n-type Si MOS structure a metal semiconductor work function difference of φm=-0.5V is required If gate is n+ polysilicon, requires silicon doping is

1.  8*1011cm-3

2.  8*1013cm-3

3.  8 *1015cm-3

4.  Cannot use p+ polysilicon gate

5.  All three

6.  A and B only

7.  A and C only

8.  None of these

View Answer  
8
Correct Answer :

All three


Explanation :
No Explanation available for this question

In a n-channel MOSFET, the parameters are Vt=0.1V,Kn0.2mA/V2 If Vss=5V and VDs==6V, then ID is

1.  0.2mA

2.  0.8mA

3.  3.2mA

4.  7.2mA

5.  50

6.  70

7.  30

8.  90

View Answer  
8
Correct Answer :

30


Explanation :
No Explanation available for this question

In a n-channel MOSFET, the parameters are Vt=0.1V,Kn0.2mA/V2 If VGS=5V and VDs==2V, then ID is

1.  2.4mA

2.  4.8mA

3.  2.8mA

4.  4.2mA

5.  3

6.  4

7.  5

8.  6

9.  2

View Answer  
9
Correct Answer :

3


Explanation :
No Explanation available for this question

The forward current of ap-n junction Ge diode if the temperature is 270C and reverse saturation current is 1 for an applied forward bias of 0.2V is

1.  3.5mA

2.  2.27mA

3.  5mA

4.  8.21mA

5.  1

6.  2

7.  0

8.  4

9.  2

View Answer  
9
Correct Answer :

1


Explanation :
No Explanation available for this question

The forward current of ap-n junction Ge diode if the temperature is 270C and reverse saturation current is 1 for an applied forward bias of 0.2V is Hence find the static resistance of the diode

1.  150Ω

2.  75 Ω

3.  88Ω

4.  Data insufficient

5.  364

6.  2254

7.  2954

8.  3234

9.  2884

View Answer  
9
Correct Answer :

2954


Explanation :
No Explanation available for this question

A vacuum diode with internal resistance 200Ω is connected to a 1Ω load and 300 volts source of supply .The PIV of the diode is 400V The peak current value is

1.  500mA

2.  353mA

3.  162mA

4.  Data insufficient

5.  36

6.  37

7.  38

8.  39

9.  None of these

View Answer  
9
Correct Answer :

37


Explanation :
No Explanation available for this question
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