For the following values of current measured in a uniformly doped npn bipolar transistor: InE=120mA,IpE=0.10mA,InC=1.18mA146241 IR=0.20mA,IG=1A,IpC=1A The value of β is

1.  0.44

2.  8.39

3.  3.69

4.  2.27

5.  17

6.  18

7.  19

8.  None of these

8
Correct Answer :

17

Explanation :
No Explanation available for this question

The leakage current of a transistor are ICBO=3 and ICEO=0.3mA IB=30 The value of β is

1.  79

2.  81

3.  99

4.  None

5.  56

6.  64

7.  63

8.  None of these

8
Correct Answer :

63

Explanation :
No Explanation available for this question

The leakage current of a transistor are ICBO=3 and ICEO=0.3mA IB=30 The value of IC is

1.  2.77mA

2.  3.276mA

3.  1.97mA

4.  2.67mA

5.  13 and 31

6.  12 and 21

7.  22 and 33

8.  14 and 41

9.  None of these

9
Correct Answer :

13 and 31

Explanation :
No Explanation available for this question

A uniformly doped silicon npn transistor is to be baised in the formed active mode with the BC junction biased by 3V.The transistor doping are NE =1017cm-3, NC =1016cm-3, Nc =1015cm-3.The BE voltage at which the minority of the majority carrier electron concentration at X=0 is 10% of the majority carrier hole concentration is

1.  0.94V

2.  0.24V

3.  0.64V

4.  0.48V

4
Correct Answer :

0.64V

Explanation :
No Explanation available for this question

For BJT Ic=6, IB=50, ICbo=1, The value of β is

1.  103.5

2.  115.2

3.  117.6

4.  51

5.  5%

6.   5.555

7.   6.25%

8.   6.66%

9.  Depends on actual price

9
Correct Answer :

6.66\%

Explanation :
No Explanation available for this question

For BJT Ic=6, IB=50, ICbo=1, For value of IE is

1.  6mA

2.  5.4mA

3.  4mA

4.  7mA

4
Correct Answer :

6mA

Explanation :
No Explanation available for this question

For a p-channel Si jFET with doping concentration Na=5*1016cm-3 and ND-5*1018cm-3, the channel thichness dimensions is a =0.5m.the gate to source voltage is Vgs=1V Determine the minimum undepleted channel thickness for given value of Vds. Assume VDs=0V

1.  2.64m

2.  0.163 m

3.  1.83 m

4.  None of these

4
Correct Answer :

0.163 m

Explanation :
No Explanation available for this question

For a p-channel Si jFET with doping concentration Na=5*1016cm-3 and N­D-5*1018cm-3, the channel thichness dimensions is a =0.5.the gate to source voltage is Vgs=1V If VDs=-5V then(a-h) is

1.  0.096

2.  0.23

3.  0.96

4.  no depleted region

4
Correct Answer :

no depleted region

Explanation :
No Explanation available for this question

An n-channel Si JFET at T=300K has doping concentration of Nd=8*1016cm-3 and Na=3*1016cm-3 and channel is 0.3.The required gate voltage

1.  -1.5731

2.  -4.66V

3.  1.5731V

4.  4.66V

4
Correct Answer :

-1.5731

Explanation :
No Explanation available for this question

For a MOs at T=300K the maximum space charge density is 7.5*10-9c/cm2 The semiconductor doping is

1.  Nd=3.27*1014cm-3

2.  3.27*1012cm-3

3.  Nd=3.27*1016cm-3

4.  3.27*1018cm-3

4
Correct Answer :

Nd=3.27*1014cm-3

Explanation :
No Explanation available for this question

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