For the following values of current measured in a uniformly doped npn bipolar transistor: InE=120mA,IpE=0.10mA,InC=1.18mA146241 IR=0.20mA,IG=1A,IpC=1A The value of β is

1.  0.44

2.  8.39

3.  3.69

4.  2.27

5.  17

6.  18

7.  19

8.  None of these

View Answer  
8
Correct Answer :

17


Explanation :
No Explanation available for this question

The leakage current of a transistor are ICBO=3 and ICEO=0.3mA IB=30 The value of β is

1.  79

2.  81

3.  99

4.  None

5.  56

6.  64

7.  63

8.  None of these

View Answer  
8
Correct Answer :

63


Explanation :
No Explanation available for this question

The leakage current of a transistor are ICBO=3 and ICEO=0.3mA IB=30 The value of IC is

1.  2.77mA

2.  3.276mA

3.  1.97mA

4.  2.67mA

5.  13 and 31

6.  12 and 21

7.  22 and 33

8.  14 and 41

9.  None of these

View Answer  
9
Correct Answer :

13 and 31


Explanation :
No Explanation available for this question

A uniformly doped silicon npn transistor is to be baised in the formed active mode with the BC junction biased by 3V.The transistor doping are NE =1017cm-3, NC =1016cm-3, Nc =1015cm-3.The BE voltage at which the minority of the majority carrier electron concentration at X=0 is 10% of the majority carrier hole concentration is

1.  0.94V

2.  0.24V

3.  0.64V

4.  0.48V

View Answer  
4
Correct Answer :

0.64V


Explanation :
No Explanation available for this question

For BJT Ic=6, IB=50, ICbo=1, The value of β is

1.  103.5

2.  115.2

3.  117.6

4.  51

5.  5%

6.   5.555

7.   6.25%

8.   6.66%

9.  Depends on actual price

View Answer  
9
Correct Answer :

6.66\%


Explanation :
No Explanation available for this question

For BJT Ic=6, IB=50, ICbo=1, For value of IE is

1.  6mA

2.  5.4mA

3.  4mA

4.  7mA

View Answer  
4
Correct Answer :

6mA


Explanation :
No Explanation available for this question

For a p-channel Si jFET with doping concentration Na=5*1016cm-3 and ND-5*1018cm-3, the channel thichness dimensions is a =0.5m.the gate to source voltage is Vgs=1V Determine the minimum undepleted channel thickness for given value of Vds. Assume VDs=0V

1.  2.64m

2.  0.163 m

3.  1.83 m

4.  None of these

View Answer  
4
Correct Answer :

0.163 m


Explanation :
No Explanation available for this question

For a p-channel Si jFET with doping concentration Na=5*1016cm-3 and N­D-5*1018cm-3, the channel thichness dimensions is a =0.5.the gate to source voltage is Vgs=1V If VDs=-5V then(a-h) is

1.  0.096

2.  0.23

3.  0.96

4.  no depleted region

View Answer  
4
Correct Answer :

no depleted region


Explanation :
No Explanation available for this question

An n-channel Si JFET at T=300K has doping concentration of Nd=8*1016cm-3 and Na=3*1016cm-3 and channel is 0.3.The required gate voltage

1.  -1.5731

2.  -4.66V

3.  1.5731V

4.  4.66V

View Answer  
4
Correct Answer :

-1.5731


Explanation :
No Explanation available for this question

For a MOs at T=300K the maximum space charge density is 7.5*10-9c/cm2 The semiconductor doping is

1.  Nd=3.27*1014cm-3

2.  3.27*1012cm-3

3.  Nd=3.27*1016cm-3

4.  3.27*1018cm-3

View Answer  
4
Correct Answer :

Nd=3.27*1014cm-3


Explanation :
No Explanation available for this question
Previous Next

Interview Questions

MongoDB
Java Script
Node JS
PHP
JQuery
Python