A vacuum diode with internal resistance 200Ω is connected to a 1Ω load and 300 volts source of supply .The PIV of the diode is 400V From the previous data, find the d,C load current of the above current

1.  100mA

2.  55.6mA

3.  163mA

4.  Data insufficient

5.  10

6.  42

7.  44

8.  5

9.  None of these

View Answer  
9
Correct Answer :

10


Explanation :
No Explanation available for this question

A npn transistor with α=0.98 is operated as an amplifier in a CB circuit with a Load resistance of 5kΩ.If the dynamic resistance 70Ω The voltage gain of current is

1.  50

2.  35

3.  70

4.  None of these

5.  49,1

6.  12,60

7.  50,2

8.  36,84

9.  None of these

View Answer  
9
Correct Answer :

12,60


Explanation :
No Explanation available for this question

A npn transistor with α=0.98 is operated as an amplifier in a CB circuit with a Load resistance of 5kΩ.If the dynamic resistance 70Ω. From the previous data, calculate the power gain of thr same current

1.  49

2.  68.6

3.  34.3

4.  70

View Answer  
4
Correct Answer :

68.6


Explanation :
No Explanation available for this question

For a circuit shown below , the maximum value of RL,that with turn the Zener ON is

1.  500Ω

2.  1kΩ

3.  250Ω

4.  None of these

View Answer  
4
Correct Answer :

250Ω


Explanation :
No Explanation available for this question

From the above data, the maximum value RL is

1.  1kΩ

2.  1.25kΩ

3.  5kΩ

4.  data insufficient

View Answer  
4
Correct Answer :

1.25kΩ


Explanation :
No Explanation available for this question

Order of concentration of acceptor atoms created by isolation diffusion in monolithic IC for regions between the isolation islands is

1.  1020cm-3

2.  1025cm-3

3.  1015cm-3

4.  1010cm-3

View Answer  
4
Correct Answer :

1020cm-3


Explanation :
No Explanation available for this question

Material used for the fabrication of gate in modern MOSFET is

1.  Highly pure SI

2.  Highly pure SIO2

3.  Epitaxial Si

4.  Highly doped poly silicon

View Answer  
4
Correct Answer :

Highly doped poly silicon


Explanation :
No Explanation available for this question

Epitaxial growth in IC chip

1.  Growth from liquid phase

2.  Can be p type only

3.  Growth from Gas phase

4.  Can be n type only

View Answer  
4
Correct Answer :

Growth from Gas phase


Explanation :
No Explanation available for this question

Order of temperature for epitaxial growth

1.  8000C

2.  20000C

3.  5000C

4.  12000C

5.  It is always even

6.  Divisible by 3

7.  Always divisible by the sum of the square of first n natural numbers

8.  Never divisible by 237

View Answer  
8
Correct Answer :

Never divisible by 237


Explanation :
No Explanation available for this question

In Monolithic IC fabrication process a. All compounds are fabricated on single crystal of silicon b. Any values of capacitor and resistor can be fabricated c. Each transistor is fussed in to separate isolated region d. Common process for different devces are carried out together Which of the above statement are true

1.  1 only

2.  2& 4 only

3.  1,3,4

4.  1 and 4

View Answer  
4
Correct Answer :

1 and 4


Explanation :
No Explanation available for this question
Previous Next

Interview Questions

MongoDB
Java Script
Node JS
PHP
JQuery
Python