If ICBo=200na, then the value of β will be

1.  99

2.  100

3.  49

4.  50

5.  13

6.  59

7.  35

8.  37

View Answer  
8
Correct Answer :

37


Explanation :
No Explanation available for this question

VBE=0.7V at ic=1mA The value of Rc and RE will be

1.  5KΩ,7kΩ

2.  7KΩ,5kΩ

3.  8KΩ,6kΩ

4.  6KΩ,8kΩ

5.  3001

6.  2893

7.  2704

8.  2890

View Answer  
8
Correct Answer :

2893


Explanation :
No Explanation available for this question

If IC =3mA,VBE will be VBE=0.7V at ic=1mA

1.  99

2.  100

3.  49

4.  50

5.  11

6.  17

7.  13

8.  23

View Answer  
8
Correct Answer :

13


Explanation :
No Explanation available for this question

If there is incorrect in temperature in a NMOS ,Vt will

1.  increase

2.  Decrease

3.  Remain constant

4.  Can’t say

5.  144

6.  168

7.  192

8.  None of these

View Answer  
8
Correct Answer :

192


Explanation :
No Explanation available for this question

If temperature increase I a NMOS id will be

1.  increase

2.  Decrease

3.  Remain constant

4.  Can’t say

View Answer  
4
Correct Answer :

Decrease


Explanation :
No Explanation available for this question

An abrupt p-n junction at zero bias and T=2=300k has dopant concentration of Na=1017cm-3 and Nd=5*1015 cm-3 The Fermi level on n- side is

1.  0.1ev

2.  0.4ev

3.  0.2ev

4.  0.3ev

View Answer  
4
Correct Answer :

0.3ev


Explanation :
No Explanation available for this question

The Fermi level on p-side is

1.  0.1ev

2.  0.2ev

3.  0.3ev

4.  0.4ev

View Answer  
4
Correct Answer :

0.4ev


Explanation :
No Explanation available for this question

A silicon p-n junction at T=300K with zero applied bias has doping concentration of ND=2*1016 cm-3 and Na=2*1015cm15 I. depletion layer with in to the n region is

1.  6.27*10-6 cm

2.  4.11*10-6 cm

3.  4*10-6 cm

4.  6.27*10-6 cm

View Answer  
4
Correct Answer :

6.27*10-6 cm


Explanation :
No Explanation available for this question

A silicon p-n junction at T=300K with zero applied bias has doping concentration of ND=2*1016 cm-3 and Na=2*1015cm15 Space charge width is

1.  4.5*10-5 cm

2.  7.5*10-5 cm

3.  6.9*10-5 cm

4.  8.1*10-5 cm

View Answer  
4
Correct Answer :

4.5*10-5 cm


Explanation :
No Explanation available for this question

A silicon abrupt junction has dopant concentration Na=2*1016 cm-3 and Nb=2*1015cm-3.The applied reverse bias is VR=10V the maximum electric field is 106V/cm The maximum doping concentration in n region

1.  6.1*1017cm-3

2.  6.4*1019cm-3

3.  3.2*1017cm-3

4.  3.2*1019cm-3

View Answer  
4
Correct Answer :

6.1*1017cm-3


Explanation :
No Explanation available for this question
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