Match the list I and list II LIST I LIST II (P) Varactor (I) Used in macro wave circuit (Q) Laser (II) Used in incoherent Sources (R) LEDs (III)Used in coherent sources (S) Tunnel diode (iV) Used in tuning circuits

1. P-IV,Q-III,R-III,S-I

2. P-IV,Q-III,R-I,S-II

3. p-III,Q-III,R-II,S-I

4. P-III,Q-IV,R-I,S-II

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Correct Answer :

P-IV,Q-III,R-III,S-I

Explanation :
No Explanation available for this question

**The transistor capacitance of Ge diode whose area is 10-2cm2 and space charge region is 2*10-4cm, will be**

1. 7.1nF

2. 5.25nF

3. 8.32nF

4. 5pF

5. 49.353 gm

6. 51.712 gm

7. 53.072 gm

8. 54.512 gm

View Answer

Correct Answer :

53.072 gm

Explanation :
No Explanation available for this question

Calculate the stability factor of a emitter stability of a emitter stabilized bias transistor network with Rb=250k ,RE=1KΩ,β=50

1. 42.53

2. 45.2

3. 50

4. None of these

5. 18

6. 180

7. 36

8. 162

9. 360

View Answer

Correct Answer :

162

Explanation :
No Explanation available for this question

**Consider silicon at T=300K doped to Na=8*1015cm-3.what will be the maximum space charge width**

1. 0.342

2. 0.333

3. 523

4. 0.452

5. 72

6. 36

7. 42

8. 50

9. 48

View Answer

Correct Answer :

Explanation :
No Explanation available for this question

The applied gate voltage required to acheive the flat band condition for p-type substrant is _ if the amount of fixed oxide change increase the flat voltage become even more_

1. Negative, Negative

2. Negative, Positive

3. Positive, Negative

4. Positive, positive

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Correct Answer :

Negative, Negative

Explanation :
No Explanation available for this question

Consider a p-type silicon substrate at T=300K doped to Na=1016cm-3,The oxide is silicon dioxide with a thickness of 550 A0 and gate is aluminum .The minimum capacitance

1. 2.23*10-8F/cm2

2. 2.23*10-6F/cm2

3. 3.45*10-8F/cm2

4. 3.4*10-6F/cm2

View Answer

Correct Answer :

2.23*10^-8F/cm²

Explanation :
No Explanation available for this question

Consider a uniformly doped silcon bipolar transistor with a metallurgical base width of 0.5 and base doping of NB =1016cm-3.the punch through voltage is to be Vnr=25V.the maximum collector doping concentration is

1. 7.46*1014cm-3

2. 8.38*1012cm-3

3. 8.38*1014cm-3

4. 9.13*1012cm-3

View Answer

Correct Answer :

8.38*10¹⁴cm^-3

Explanation :
No Explanation available for this question

The mobility of carrier in the channel of a MOSFET is

1. Higher than in bulk semiconductor

2. Lower than in bulk semiconductor

3. Equal to that I Bulk semiconductor

4. Depend on doping

5. 105.75

6. 107.55

7. 145.50

8. 140.50

9. None of these

View Answer

Correct Answer :

145.50

Explanation :
No Explanation available for this question

What will be maximum value of VCe such that thermal run way will not occur

1. 10V

2. 0.2V

3. 8V

4. 5V

5. 50

6. 45

7. 60

8. 68

9. None of these

View Answer

Correct Answer :

Explanation :
No Explanation available for this question

The circuit shows uses three identical diode having =1,IS=10-14A Find the value of the current I to produce V0=2Volt

1. 3.81mA

2. 3mA

3. 2.8mA

4. 6mA

5. 100

6. 10,000

7. 100100

8. 100,000

View Answer

Correct Answer :

10,000

Explanation :
No Explanation available for this question

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