# If in intrinsic germanium at 300K(2700C), charge concent-ratio and mobilities of free electrons and holes are 2.5*1013 per cc,3.8*103 cm2/V-sec and 1.8*103 cm2/V-sec respectively, then its resistivity at 300K is

1.  230*1013

2.  100 cm

3.  44.6 cm

4.  22.3cm

4

44.6 cm

Explanation :
No Explanation available for this question

# Avalanche photodiodes are preferred over PIN diodes in optical communication system because of

1.  Speed of operation

2.  Higher resistivity

3.  Larger band width

4.  Large power handling capacity

4

Large power handling capacity

Explanation :
No Explanation available for this question

# If α=0.98, Ic0=6μA and IR=100μA for a transistor, then value of Ic will be

1.  2.3mA

2.  3.1mA

3.  4.6mA

4.  5.2mA

4

5.2mA

Explanation :
No Explanation available for this question

# In a transistor amplifier, the reverse saturation current Ic0

1.  Doubles for every 100c rise in temperature

2.  Doubles for every 10C rise in temperature

3.  Increase linearly with temperature

4.  Doubles for every 50C rise in temperature

4

Doubles for every 50C rise in temperature

Explanation :
No Explanation available for this question

# The transition region in an open circuited p-n junction contains

1.  Free electrons only

2.  Holes only

3.  Both free electrons and holes

4.  Uncovered immobile and impurity ions

4

Uncovered immobile and impurity ions

Explanation :
No Explanation available for this question

# In a p-n diode, hole diffusion from p-region to n-region because

1.  There is higher concentration of holes in the p-region

2.  Holes are positively charged

3.  Holes are uncharged to move by the barrier potential

4.  The free electron in the n-region attract the holes

4

Holes are uncharged to move by the barrier potential

Explanation :
No Explanation available for this question

# In a pn diode, with the increase of reverse bias, the reverse current

1.  Increases

2.  Decreases

3.  Remains constant

4.  May increase or decrease depending on the doping

4

Remains constant

Explanation :
No Explanation available for this question

# The reverse saturation current I0 in germanium diodes varies as

1.  T

2.  T1.5

3.  T2

4.  1/T Where T is temperature in degK

4

T1.5

Explanation :
No Explanation available for this question

# In silicon diode, reverse saturation current I0 varies as

1.  T

2.  T1.5

3.  T2

4.  1/T

4

T

Explanation :
No Explanation available for this question

1.  1/I2

2.  1/I

3.  I

4.  P

4