# An ideal p-channel MOSFET has the following parameters W=15μm,μp=300cm2/V-S L=1.5 μm,t0x=350A0, and VτP=-0.8V  If transistors is operating in non saturation region at VSD-0.5V, then value of gm is

1.  28.6ms

2.  286ms

3.  148ms

4.  0.148ms

4

0.148ms

Explanation :
No Explanation available for this question

# An deal n-channel MOSFET has the following parameters W=30μm,μn=450cm2/V-s,L=2μm,t0x=350A0, V τN=-0.8V If transistor is operating in saturation at VGS=4V, then value of gm is

1.  486μs

2.  0.213ms

3.  2.13ms

4.  48.6ms

4

2.13ms

Explanation :
No Explanation available for this question

# In a transistor having finite, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base junction and depletion region generation current, the base current will

1.  Increase

2.  Decrease

3.  Remain constant

4.  None of these

4

Decrease

Explanation :
No Explanation available for this question

# Threshold voltage of an channel MOSFET can be increased by

1.  Increasing the channel doping concentration

2.  Reducing the channel doping concentration

3.  Reducing the channel length

3

Reducing the channel doping concentration

Explanation :
No Explanation available for this question

# The transit time of the current carries through the channel of an FET decides its

1.  Switching

2.  On/off

3.  Dynamic

4

Switching

Explanation :
No Explanation available for this question

# In the transistor circuit shown in figure below, collector to ground voltage is +20v. Which of the following is the probable cause of error

1.  Collector –emitter terminals shorted

2.  Emitter to ground connection open

3.  10 ohms resistor open

4.  Collector base terminals shorted

4

Emitter to ground connection open

Explanation :
No Explanation available for this question

# A switched mode power supply operating at 20 kHz to 100 kHz range use as the main switching element is

1.  Thyristor

2.  MOSFET

3.  Triac

4.  UJT

4

MOSFET

Explanation :
No Explanation available for this question

# A change in the value of the emitter resistance Re, in a difference amplifier

1.  Affects the difference mode gain, Ad

2.  Affects the common mode gain, Ac

3.  Affects both Ad and Ac

4.  Does not affect either Ad and Ac

4

Affects the common mode gain, Ac

Explanation :
No Explanation available for this question

# If a transistor is operating with both of its junctions forward biased, but with collector base forward bias greater than the emitter base forward bias, then its operating in the

1.  Forward active mode

2.  Reverse saturation mode

3.  Reverse active mode

4.  Forward saturation saturation mode

4

Reverse saturation mode

Explanation :
No Explanation available for this question

# The common emitter short circuit current gain of a transistor

1.  Is a monotonically increasing of the collector current Ic

2.  Is a monotonically decreasing function Ic

3.  Increases with Ic for low Ic, reaches a maximum, and the decreases in Ic

4.  Is not a function of Ic

4