# For the amplifier shown in the figure below The overall gain of the amplifier is where Ri = 100kΩ, 100 v/v, R0 1Ω, Rs = 25 kΩ,, RL = 3Ω

1.  60 v/v

2.  66 v/v

3.  50 v/v

4.  70 v/v

4

60 v/v

Explanation :
No Explanation available for this question

# Which of the following represents the output impedance of the regulator

1.  1Ω

2.  10Ω

3.  0.1Ω

4.   0.01Ω

4

0.01Ω

Explanation :
No Explanation available for this question

# A transresistance amplifier with Ri = 20 kΩ, Aoc = 300 Ω is driven by a source is with parallel resistance Rs = 100kΩ and drives a load RL = 600Ω, the transistance gain of the amplifier is

1.  5/9 V/A

2.  5/9  V/mA

3.   0.5/9 V/A

4.  5/0.09 V/A

4

5/9  V/mA

Explanation :
No Explanation available for this question

# Suppose RRR (Ripple Rejection Ratio) of voltage regulator is 78dB, at 120 Hz, then the amount of output ripple (Vro) will result for every volt of input ripple (Vri) is

1.  1.25 m/V

2.  0.126 V

3.  0.126 mV

4.  7.9 KV

4

0.126 mV

Explanation :
No Explanation available for this question

# A transresistance amplifier with Ri = 20 kΩ, Aoc = 300 Ω is driven by a source is with parallel resistance Rs = 100kΩ and drives a load RL = 600Ω, the power gain PL/ Ps is, whwre Ps is the power delivered by the source is, and PL is the power absorbed by the load RL

1.  3.086 mw/w

2.  30.86 mw/w

3.  308.6 mw/w

4.  30.86 w/w

4

30.86 mw/w

Explanation :
No Explanation available for this question

# A transresistance amplifier is driven by a source with Vs = 30 mV, Rs = 100kΩ, and drives a load RL , Digital multimetre ( DMM ) readings at the input and the output yield V1 = 25mv, iL = 0.8A, for RL 30Ω. Then what is the DNN readings if Rs 50 kΩ , and drives a load RL = 40Ω

1.  1 V

2.  0.51 V

3.   0.32 V

4.  0.792 V

4

0.792 V

Explanation :
No Explanation available for this question

# A PNP Bipolar transistor to operate as an amplifier , which of the following is correct

1.  Emitter – Base junction FB, Collector – Base junction RB

2.  Emitter – Base junction FB, Collector – Base junction FB

3.  Emitter – Base junction RB, Collector – Base junction FB

4.   Emitter – Base junction RB, Collector – Base junction RB

4

Emitter – Base junction FB, Collector – Base junction RB

Explanation :
No Explanation available for this question

# which of the following represents correct order of impurity doping of Emotter, Base and Collector respectively

1.  1017 1019 & 1015 per cm3

2.  1019 1015 & 1017 per cm3

3.  1019 1017 & 1015 per cm3

4.  1017 1015 & 1019 per cm3

4

1019 1017 & 1015 per cm3

Explanation :
No Explanation available for this question

# In a JFET, the drain current magnitude decreases as the reverse bias across the gate. Channel increases because a larger reverse bias causes

1.  More recombination in the transition region b. c. d.

2.  The transition region to be wider, which narrows the thickness of the conducting channel

3.  The mobile carriers to travel slower in the channel, by reducing their mobility

4.  The reverse bias current to increase, then diverting the channel current away from the drain

4

More recombination in the transition region

b.

c.

d.

Explanation :
No Explanation available for this question

1.  99, 100

2.  100,99

3.  100, 101

4.  101, 100

4