1. 60 v/v
2. 66 v/v
3. 50 v/v
4. 70 v/v
60 v/v
1. 1Ω
2. 10Ω
3. 0.1Ω
4. 0.01Ω
0.01Ω
1. 5/9 V/A
2. 5/9 V/mA
3. 0.5/9 V/A
4. 5/0.09 V/A
5/9 V/mA
1. 1.25 m/V
2. 0.126 V
3. 0.126 mV
4. 7.9 KV
0.126 mV
1. 3.086 mw/w
2. 30.86 mw/w
3. 308.6 mw/w
4. 30.86 w/w
30.86 mw/w
1. 1 V
2. 0.51 V
3. 0.32 V
4. 0.792 V
0.792 V
1. Emitter – Base junction FB, Collector – Base junction RB
2. Emitter – Base junction FB, Collector – Base junction FB
3. Emitter – Base junction RB, Collector – Base junction FB
4. Emitter – Base junction RB, Collector – Base junction RB
Emitter – Base junction FB, Collector – Base junction RB
1. 1017 1019 & 1015 per cm3
2. 1019 1015 & 1017 per cm3
3. 1019 1017 & 1015 per cm3
4. 1017 1015 & 1019 per cm3
1019 1017 & 1015 per cm3
1. More recombination in the transition region b. c. d.
2. The transition region to be wider, which narrows the thickness of the conducting channel
3. The mobile carriers to travel slower in the channel, by reducing their mobility
4. The reverse bias current to increase, then diverting the channel current away from the drain
More recombination in the transition region
b.
c.
d.
1. 99, 100
2. 100,99
3. 100, 101
4. 101, 100
99, 100