1. 3V
2. 6 V
3. 9 V
4. 12 V
9 V
1. IC = IBβ + ( 1+β ) ICBO
2. IC = βIB
3. Both a & b
4. | IC/ β |< IB
| IC/ β |< IB
1. The reverse-biased drain gate junction breaks down
2. Of thermal runaway
3. The drain and source terminals get effectively shorted
4. The drain-gate junction behaves like a forward-biased diode
The reverse-biased drain gate junction breaks down
1. 0.988, 80.31 & 81.31
2. 0.99, 99, 100
3. 80.31, 0.988 & 81.31
4. 99, 0.99, 100
80.31, 0.988 & 81.31
1. Exponential
2. Linear
3. Parabolic
4. Hyperbolic
Parabolic
1. 40.5 v
2. 18.25 V
3. 1.60 V
4. None
40.5 v
1. A PMOS transistor requires a larger area than an NMOS transistor
2. An NMOS transistor requires a larger area than PMOS transistor
3. A PMOS transistor must have twice The channel length of an NMOS transistor
4. A PMOS transistor must have twice the threshold voltage of an NMOS transistor
A PMOS transistor requires a larger area than an NMOS transistor
1. 7Ω
2. 70Ω
3. 70/3Ω
4. 14Ω
14Ω
1. 25.025 mV
2. 7.812 mV
3. 1.25 mV
4. 15.62 mV
15.62 mV
1. Increases its input resistance
2. Increases its voltage gain
3. protects the transistor against accidental short circuit
4. Reduces its current gain
protects the transistor against accidental short circuit