# The output voltage of the regulated power supply shown in the figure is

1.  3V

2.  6 V

3.  9 V

4.   12 V

4

9 V

Explanation :
No Explanation available for this question

# Which of the following equation holds good when the transistor is in saturation region

1.  IC = IBβ + ( 1+β ) ICBO

2.  IC = βIB

3.  Both a & b

4.  | IC/ β |< IB

4

| IC/ β |< IB

Explanation :
No Explanation available for this question

# The drain characteristics of a JFET show an abrupt increase in current at sufficient large drain source voltages. This is because

1.  The reverse-biased drain gate junction breaks down

2.  Of thermal runaway

3.  The drain and source terminals get effectively shorted

4.  The drain-gate junction behaves like a forward-biased diode

4

The reverse-biased drain gate junction breaks down

Explanation :
No Explanation available for this question

# An NPN – Transistor is biased in the forward active mode. If base current is IB = 9.6μA, and emitter current is IE = 0.780 mA.Then the value of common emitter current gain, common base current gain and common collector current gain is

1.  0.988, 80.31 & 81.31

2.  0.99, 99, 100

3.  80.31, 0.988 & 81.31

4.  99, 0.99, 100

4

80.31, 0.988 & 81.31

Explanation :
No Explanation available for this question

# In saturation region, the JFET transfer characteristics are

1.  Exponential

2.  Linear

3.  Parabolic

4.  Hyperbolic

4

Parabolic

Explanation :
No Explanation available for this question

# The open – emitter breakdown voltage of a transistor ic 200v and it,s current gain is 120. Assume the empirical constant as 3. Then open-base Breakdown voltage is

1.  40.5 v

2.  18.25 V

3.  1.60 V

4.  None

4

40.5 v

Explanation :
No Explanation available for this question

# To achieve the same ON resistance, with the same magnitudes of bias voltages

1.  A PMOS transistor requires a larger area than an NMOS transistor

2.  An NMOS transistor requires a larger area than PMOS transistor

3.  A PMOS transistor must have twice The channel length of an NMOS transistor

4.  A PMOS transistor must have twice the threshold voltage of an NMOS transistor

4

A PMOS transistor requires a larger area than an NMOS transistor

Explanation :
No Explanation available for this question

# In the voltage regulator is shown below, the load current can vary from 100 mA to 500 mA. Assuming that the Zener diode is ideal (i.e Zener knee current is negligible small and Zener resistance is zero in the breakdown region), the value of R is

1.   7Ω

2.  70Ω

3.  70/3Ω

4.  14Ω

4

14Ω

Explanation :
No Explanation available for this question

# For the single Op-Amp bridge amplifier circuit shown below, calculate output V0 if R1 = 2KΩ, R2 = 10KΩ, δ= 0.001 and R = 5 KΩ and Vref = 5 V

1.  25.025 mV

2.  7.812 mV

3.  1.25 mV

4.  15.62 mV

4

15.62 mV

Explanation :
No Explanation available for this question

# Adding a collector resistor an emitter follower

1.  Increases its input resistance

2.  Increases its voltage gain

3.  protects the transistor against accidental short circuit

4.  Reduces its current gain

4