Eamcet - Physics - Semiconductor Physics Test

Test Instructions :

1. The Test is 1hr duration.
2. The Test Paper consists of 30 questions. The maximum marks are 30.
3. All the questions are multiple choice question type with three options for each question.
4. Out of the three options given for each question, only one option is the correct answer.
5. Each question is allotted 1 mark for each correct response.
6. 0.25 will be deducted for incorrect response of each question.
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In n-p-n transistor, in CE configuration:(1)  The emitter is heavily doped than the collector.(2)  Emitter and collector can be interchanged.(3)  The base region is very thin but is heavily doped.(4)  The conventional current flows from base to emitter

  

  

  

  

An n-p-n transistor power amplifier in C-E configuration gives :

  

  

  

  

Which of the following Statements is not correct when a junction diode is in forward bias ?

  

  

  

  

In an n-type semiconductor, the Fermi energy level lies

  

  

  

  

Indium impurity in germanium makes it into a

  

  

  

  

While a collector to emitter voltage is constant in a transistor, the collector current changes by 8.2 mA. When the emitter current changes by 8.3 mA. The value of forward current ratio is:

  

  

  

  

A transistor having a β equal to 80 has a change in base current of 250μA,then the change in collector current is :

  

  

  

  

Consider a p-n junction as a capacitor, formed with p nnd n-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that a n-p-n transistor is working as an amplifier in CE configuration. If C1 and C2 are the base-emitter and collector-emitter junction capacitances , then :

  

  

  

  

To obtain p-type extrinsic semi- conductor, the impurity element to be added to Germanium should be of valency :

  

  

  

  

In a transistor if IC/IE and IC/IB=β.If α varies between 20/21 and 100/101,then the value of β lies between

  

  

  

  

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