# The Laplace transform of i(t) is given by I (s) = 2/(s(1 + s)) As t → ∞, the value of i(t) tends to

1.  0

2.   1

3.  2

4.   ∞

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1

Explanation :
No Explanation available for this question

# The differential equation for the current i(t) in the circuit of Figure is

1.  2(d2i/dt2) + 2(di/dt) + i(t) = sin t

2.  (d2i/dt2) + 2(di/dt) + 2i(t) = cos t

3.  2(d2i/dt2) + 2(di/dt) + i(t) = cos t

4.  (d2i/dt2) + 2(di/dt) + 2i(t) = sin t

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2(d2i/dt2) + 2(di/dt) + i(t) = cos t

Explanation :
No Explanation available for this question

# n-type silicon is obtained by doping silicon with

1.  Germanium

2.  Aluminum

3.  Boron

4.  Phosphorus

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Phosphorus

Explanation :
No Explanation available for this question

# The bandgap of silicon at 300 K is

1.  1.36 eV

2.  1.10 eV

3.  0.80 eV

4.  0.67 eV

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1.10 eV

Explanation :
No Explanation available for this question

# The  intrinsic  carrier  concentration  of  silicon  sample  of  300  K  is  1.5  x  1016/m3.  If  after doping, the number of majority carriers is 5 x 1020/m3, the minority carrier density is

1.  4.50 x 1011/m3

2.  3.33 x 104/m3

3.  5.00 x 1020/m3

4.  3.00 x 10-5/m3

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4.50 x 1011/m3

Explanation :
No Explanation available for this question

# Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively

1.  X : reverse, Y : reverse

2.  X : reverse, Y : forward

3.  X : forward, Y : reverse

4.  X : forward, Y : forward

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X : forward, Y : reverse

Explanation :
No Explanation available for this question

# For  an  n-channel  enhancement  type  MOSFET,  if  the  source  is  connected  at  a  higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of the MOSFET will

1.  remain unchanged

2.  decrease

3.  change polarity

4.  increase

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remain unchanged

Explanation :
No Explanation available for this question

# Choose  the  correct match  for  input  resistance  of  various  amplifier  configurations  shown Below   Configuration   Input Resistence CB: Common Base LO: Low CC: Common Collector MO: Moderate CE: Common Emitter HI: High

1.  CB-LO, CC-MO, CE-HI

2.  CB-LO, CC-HI, CE-MO

3.  CB-MO, CC-HI, CE-LO

4.  CB-HI, CC-LO, CE-MO

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CB-LO, CC-HI, CE-MO

Explanation :
No Explanation available for this question

# The circuit shown in figure is best described as a

1.  bridge rectifier

2.   ring modulator

3.  frequency discriminatory

4.  voltage doubler

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voltage doubler

Explanation :
No Explanation available for this question

1.  1/2

2.  1/3

3.  1/6

4.  1/12

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