ID and VDS under DC conditions are respectively

1.  5.625 mA and 8.75 V  

2.  7.500 mA and 5.00 V

3.  4.500 mA and 11.00 V

4.  6.250 mA and 7.50 V

View Answer  
4
Correct Answer :

5.625 mA and 8.75 V

 


Explanation :
No Explanation available for this question

Transconductance in milli-Siemens (mS) and volta

1.  1.875 mS and 3.41  

2.   1.875 mS and - 3.41

3.  3.3 mS and - 6

4.  3.3 mS and 6

View Answer  
4
Correct Answer :

1.875 mS and - 3.41


Explanation :
No Explanation available for this question

The impurity commonly used for realizing the base region of a silicon n-p-n transistor is

1.  Gallium

2.  Indium

3.  Boron

4.  Phosphorus

View Answer  
4
Correct Answer :

Boron


Explanation :
No Explanation available for this question

The following program starts at location 0100H. LXI SP, 00FF LXI H, 0701 MVI A, 20H SUB M The content of accumulator when the program co

1.  20H

2.  02H

3.   00H

4.  FFH

View Answer  
4
Correct Answer :

20H


Explanation :
No Explanation available for this question

If in addition following code exists from 019H onw ORI 40 H ADD M What will be the result in the accumulator after the

1.  40H

2.  20H

3.  60H

4.  42H

View Answer  
4
Correct Answer :

40H


Explanation :
No Explanation available for this question

Based on the above results, the gain and phase margins of the system will be

1.  -7.09 and 87.5°  

2.  7.09 and 87.5°

3.  7.09dB and - 87.5°

4.  - 7.09dB and - 87.5°

View Answer  
4
Correct Answer :

- 7.09dB and - 87.5°


Explanation :
No Explanation available for this question

If for a silicon n-p-n transistor, the base-to-emitter voltage (VBE) is 0.7V and the collector-to-base voltage (VCB) is 0.2V, then the transistor is operating in the

1.  normal active mode

2.  saturation mode

3.  inverse active mode

4.  cutoff mode

View Answer  
4
Correct Answer :

normal active mode


Explanation :
No Explanation available for this question

If  the probability density  function  is divided  into  three regions as shown  in  the  figure,  the value of a in the figure is

1.  1/3  

2.  2/3

3.  1/2

4.  1/4

View Answer  
4
Correct Answer :

1/4


Explanation :
No Explanation available for this question

The quantization noise power for the quantization region between - a and + a in the figure is

1.  4/81

2.   1/9

3.  5/81

4.  2/81

View Answer  
4
Correct Answer :

4/81


Explanation :
No Explanation available for this question

Consider the following statements S1 and S2. S1 :  The β of a bipolar transistor reduces if the base width is increased. S2 :  The β of a bipolar transistor increases if the doping concentration in the base is increased Which one of the following is correct

1.  S1 is FALSE and S2 is TRUE

2.  both S1 and S2 are TRUE

3.  both S1 and S2 are FALSE

4.  S1 is TRUE and S2 is FALSE

View Answer  
4
Correct Answer :

S1 is TRUE and S2 is FALSE


Explanation :
No Explanation available for this question
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