1. 2.04 V
2. 1.08V
3. 4.08V
4. 2.16V
1.08V
1. Decreases with increasing doping concentration
2. Increases with decreasing band gap
3. Does not depend on doping concentration
4. Increases with increase in doping concentration
Increases with increase in doping concentration
1. 1.2k ohms
2. 80ohms
3. 50 ohms
4. 0 ohms
50 ohms
1. 8*1011cm-3
2. 8*1013cm-3
3. 8*1015cm-3
4. Cannot use p* polysilicon gate
Cannot use p* polysilicon gate
1. 4*1011cm-3
2. 4*1013 cm-3
3. 4*1016cm-3
4. Cannot use n* polysilicon gate
4*1013 cm-3
1. 9.96mA
2. 6.43mA
3. 2.48mA
4. 5.56mA
2.48mA
1. 2.33V
2. -2.33V
3. 3.29V
4. -3.29V
-2.33V
1. A-2,B-3,C-1
2. A-2,B-1,C-3
3. A-3,B-1,C-2
4. A-1,B-2,C-3
A-2,B-3,C-1
1. 5.991, 5.995, 6.005, 6.009 MHz
2. 953.5, 954.1, 955.7, 956.4 kHz
3. 5, 9 kHz
4. 795.8, 432.4 Hz
953.5, 954.1, 955.7, 956.4 kHz
1. 4 5 2 1 3
2. 8 4 3 1 2
3. 6 4 3 1 7
4. 1 2 3 4 5
1 2 3 4 5