1. 1 and 4 only
2. 3 and 4 only
3. 1,3 and 4
4. 2,3 and 4
3 and 4 only
1. metals
2. Semiconductors
3. Insulators
4. none of these
metals
1. DSB has two sidebands and SSB one sideband
2. DSB has a carrier and two sidebands and SSB, a carrier and a sideband.
3. DSB may or may not have a carrier with two sideband and SSB either of the two sidebands without carrier
4. DSB has a carrier and two side bands and SSB without carrier and two different sideband
DSB may or may not have a carrier with two sideband and SSB either of the two sidebands without carrier
1. Forward current
2. diffusion current
3. drift current
4. reverse saturation current
reverse saturation current
1. Type of semiconductor
2. mobility of charge carriers
3. diffusion constant
4. carrier concentration
diffusion constant
1. 945 kHz
2. 970 kHz
3. 996 kHz
4. 1045 kHz
996 kHz
1. at pinch of f condition
2. beyond pinch off voltage
3. well below pinch off condition
4. for any value of VDS
well below pinch off condition
1. 5 mA
2. 2.5mA
3. 10 mA
4. 25mA
2.5mA
1. p channel depletion MOSFET
2. p channel enhancement MOSFET
3. Complementary MOSFET
4. p channel JFET
p channel depletion MOSFET
1. P channel MOS is easier to produce than n channel MOS
2. n channel MOS must have twice the area of p channel MOS for the same ON resistance
3. p channel MOS has faster switching action than n channel MOS
4. p channel MOS has higher packing density than n channel MOS
P channel MOS is easier to produce than n channel MOS