1.  1 and 4 only

2.  3 and 4 only

3.  1,3 and 4

4.  2,3 and 4

4
Correct Answer :

3 and 4 only


Explanation :
No Explanation available for this question

1.  metals

2.  Semiconductors

3.  Insulators

4.  none of these

4
Correct Answer :

metals


Explanation :
No Explanation available for this question

1.  DSB has two sidebands and SSB one sideband

2.   DSB has a carrier and two sidebands and SSB, a carrier and a sideband.

3.   DSB may or may not have a carrier with two sideband and SSB either of the two sidebands without carrier

4.  DSB has a carrier and two side bands and SSB without carrier and two different sideband

4
Correct Answer :

DSB may or may not have a carrier with two sideband and SSB either of the two sidebands without carrier


Explanation :
No Explanation available for this question

1.  Forward current

2.  diffusion current

3.  drift current

4.  reverse saturation current

4
Correct Answer :

reverse saturation current


Explanation :
No Explanation available for this question

1.  Type of semiconductor

2.  mobility of charge carriers

3.  diffusion constant

4.   carrier concentration

4
Correct Answer :

diffusion constant


Explanation :
No Explanation available for this question

1.  945 kHz

2.  970 kHz

3.  996 kHz

4.  1045 kHz

4
Correct Answer :

996 kHz


Explanation :
No Explanation available for this question

1.  at pinch of f condition

2.  beyond pinch off voltage

3.  well below pinch off condition

4.  for any value of VDS

4
Correct Answer :

well below pinch off condition


Explanation :
No Explanation available for this question

1.  5 mA

2.  2.5mA

3.  10 mA

4.  25mA

4
Correct Answer :

2.5mA


Explanation :
No Explanation available for this question

1.  p channel depletion MOSFET

2.  p channel enhancement MOSFET

3.  Complementary MOSFET

4.  p channel JFET

4
Correct Answer :

p channel depletion MOSFET


Explanation :
No Explanation available for this question

1.  P channel MOS is easier to produce than n channel MOS

2.  n channel MOS must have twice the area of p channel MOS for the same ON resistance

3.  p channel MOS has faster switching action than n channel MOS

4.  p channel MOS has higher packing density than n channel MOS

4
Correct Answer :

P channel MOS is easier to produce than n channel MOS


Explanation :
No Explanation available for this question

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