1. Both junctions are reverse biased
2. Both junctions are forward biased
3. Emitter junction is forward biased while collector junction is reverse biased
4. Emitter junction is reverse biased while collector junction is forward biased
Emitter junction is forward biased while collector junction is reverse biased
1. Both JE and JC are forward biased
2. Both JE and JC are reverse biased
3. JE is forward biased while JC is reverse biased
4. JE is reverse biased while JC is forward biased
Both JE and JC are forward biased
1. Both junctions are reverse biased
2. Both junctions are forward biased
3. Emitter junction is reverse biased while collector junction is forward biased
4. Emitter junction is forward biased while collector junction is reverse biased
Emitter junction is reverse biased while collector junction is forward biased
1. npn silicon transistor in plastic package
2. pnp transistor in plastic package
3. npn transistor in metallic case
4. pnp germanium transistor in metallic case
npn transistor in metallic case
1. Hole drift current
2. Hole diffusion current
3. Electron diffusion current
4. Electron drift current
Hole drift current
1. active region
2. Saturation region
3. Cutoff region
4. Inverted region-
active region
1. increase with increase of temperature
2. decrease with increase of temperature
3. is normally greater for SI transistor than Ge transistor
4. mainly depends on the emitter base junction bias
is normally greater for SI transistor than Ge transistor
1. VDS/ID at the origin
2. VDS/ID in the saturation region
3. VDS/?ID in the saturation region
4. VGS/ID at the origin
VGS/ID at the origin
1. both lowest and the highest modulation frequencies
2. only depth of modulation
3. depth of modulation and lowest modulation frequency
4. depth of modulation and highest modulation frequency
depth of modulation and highest modulation frequency
1. IDSS(1-VGS/VP)
2. IDSS(1-VGS/VP)2
3. IDSS√(1-VGS/VP)
4. IDSS2(1-VGS/VP)
IDSS(1-VGS/VP)