# JFET in a circuit shown in the figure , has IDSS=10mA and Vp=-5v.Value of the resistance IDSS=10mA and Vp=-5v.Value of the resistance RS for a drain current IDS=6.4mA is (select nearest value)

1.  156 ohms

2.  470 ohms

3.  560ohms

4.  1 kilo-ohms

4

156 ohms

Explanation :
No Explanation available for this question

# The threshold voltage of an n-channel MOSFET can be increased by

1.  Increasing the channel doping concentration

2.  Reducing the channel doping concentration

3.  Reducing gate oxide thickness

4.  Reducing the channel length

4

Reducing the channel doping concentration

Explanation :
No Explanation available for this question

# An n-channel JFET has IDSS=1mA and Vp=-5V. It’s maximum transconductance is

1.  0.1milli mho

2.  0.4 milli mho

3.  1.0 milli mho

4.  4.0 milli mho

4

0.4 milli mho

Explanation :
No Explanation available for this question

# In a DSB-8C system with 100% modulation, the power saving is

1.  60 %

2.  66 %

3.  76%

4.  100%

4

66 \%

Explanation :
No Explanation available for this question

# An n channel silicon(Eg=1.1 ev)MOSFET was fabricated using n+poly silicon gate and threshold voltage was found to be 1V.Now, if gate is changed to p+ poly silicon, other things remaining the same, the new threshold voltage should be

1.  -0.1V

2.  0V

3.  1.0V

4.  2.1V

4

1.0V

Explanation :
No Explanation available for this question

1.   110MHz

2.  112MHz

3.  114MHz

4.   120MHz

4

112MHz

Explanation :
No Explanation available for this question

# Two identical FETs, each characterized by the parameters gm and rd are connected in parallel. Then composite FET is characterized by the parameters

1.  gm /2 and 2rd

2.  gm /2 and rd/2

3.  2gm and rd/2

4.  2gm and 2rd

4

2gm and rd/2

Explanation :
No Explanation available for this question

# A FM signal is being broadcast in the 88.108MHz band having a carrier swing of 125 kHz. The modulation index is

1.  100%

2.  83%

3.  67%

4.  50%

4

83\%

Explanation :
No Explanation available for this question

# An FM voltage signal s(t), with a carrier frequency of 1.15GHz has a complex envelope g(t)=AC[1+m(t)], where AC=500V and modulation is a 1kHz sinusoidal test tone described by m(t)=08 sin(2πx103t). appears acr0ss a 50Ω resistive load. What is the actual power dissipated in the load

1.  165W

2.  82.5kW

3.  3.3kW

4.  6.6kW

4

165W

Explanation :
No Explanation available for this question

# Pre-emphasis in FM systems involves

1.  compression of the modulating signal

2.  expansion of the modulating signal

3.  amplifier of lower frequency components

4.  amplification of higher frequency components of the modulating signal

4