# A silicon pn junction with doping profile of Na=1016cm-3 and Nd=1015cm-3 has a sectional area of 10-2cm2.If length of the p region is 2mm and length of the n-region is 1mm,then approximately series resistance of the diode is

1.  62 Ω

2.  43 Ω

3.  72 Ω

4.  81 Ω

4

72 Ω

Explanation :
No Explanation available for this question

# The figure given below shows the transfer characterstics of

1.  Peak clipper

2.  Bottom clipper

3.  Clamper

4.   Two level clipper

4

Peak clipper

Explanation :
No Explanation available for this question

# A uniformely doped silicon pn junction has dopant profile of Na=Nd=5*1016cm-3. If peak electric field in the junction at breakdown is E=4*105V/cm, then breakdown voltage of this junction is

1.  35V

2.  30V

3.  25V

4.  20V

4

20V

Explanation :
No Explanation available for this question

# An abrupt silicon p*n junction has an n-region doping concentration of Nd=5*1016cm-3.The minimum n-region width, such that avalanche breakdown occurs before the depletion region reaches an ohmic contact is (VB≈100V)

1.  5.1μm

2.  3.6μm

3.  7.3μm

4.  6.4μm

4

5.1μm

Explanation :
No Explanation available for this question

# The figure shown below is a circuit of

1.  Bridge rectifier

2.  Voltage doubler

3.  Rectifier with filter

4.   Comparator

4

Voltage doubler

Explanation :
No Explanation available for this question

# A silicon pn junction diode has doping profile Na=Nd=5*1019cm-3.The space charge width at a forward bias voltage of Va=0.4V is

1.  102A0

2.  44A0

3.  153A0

4.  6A0

5.  BJT

5

6A0

Explanation :
No Explanation available for this question

# An amplifier has gain A=100 , upper cut-off frequency of 100kHz and lower cut off frequency of 1 kHz. A negative feedback of β=01 is added. Wichone of the following is not correct

1.  Gain becomes 100/11

2.  Lower cut off frequency becomes(1000/11) Hz

3.  Upper cut off frequency becomes 1.1MHz

4.   dB of feedback is 20log1011

4

dB of feedback is 20log1011

Explanation :
No Explanation available for this question

# Consider the following four common type of transistor Poin contact transistor Bipolar junction transistor Mos field effect transistor Junction field effect transistor Corrct arrangement of these transistors in the increasing order of input impedence is

1.  1,2,4,3

2.  1,2,3,4

3.  2,1,3,4

4.  2,1,4,3

4

2,1,4,3

Explanation :
No Explanation available for this question

# For the amplifier shown in the figure given below, the lower cut-off frequency depends on

1.  Cs, CE, internal junction capacitances of transistor

2.  Strong wiring capacitance(CW), CC

3.  Cs, CE, Cc

4.   Cs, CE only

4

Cs, CE, Cc

Explanation :
No Explanation available for this question

# A junction transistor operating at room temperature with Ic=2mA, where kT/q=25mV has β=100. The values of parameters gm in mhos and rx in ohms will be respectively

1.  0.04 and 2500

2.  0.08 and 1250

3.  0.5 and 1800

4.  0.08 and 15000

4