If transistors are mounted on a heat sink so that pcmax changes to 3 watts, what will be the new value of the maximum power delivered

1.  0.1 watt

2.  0113 watt

3.  1.133 watt

4.   11 watt

4

0113 watt

Explanation :
No Explanation available for this question

When Ra=Rb=Rd=100 ohms, output voltage V0 will be

1.  0

2.  10

3.  100

4.   120

4

0

Explanation :
No Explanation available for this question

When Ra=Rb=Rd=100 ohms and RD=120 ohms, output voltage V0 will be

1.  -0.345 V

2.  -0.445 V

3.  -0.545 V

4.   -0.645 V

4

-0.545 V

Explanation :
No Explanation available for this question

A small concentration of minority carrier is injected in to a homogeneous semiconductor crystal at one point. An electric field of 10V/cm is applied across the crystal and this moves the minority carriers a distances of 1cm in 20μ sec.The mobility (in cm2/volt sec) of the minority carrier is

1.  1,000

2.  2,000

3.  5,000

4.  500,000

4

5,000

Explanation :
No Explanation available for this question

To meet the following specifications: Differential mode gain(double ended)=-500 Common-mode rejection ratio=500 Differential mode input resistance=2 MΩ values of RC and RE respectively are

1.  5x106Ω, 3.5x106Ω

2.  4x106Ω, 2.5x106Ω

3.  5x106Ω, 3.5x106Ω

4.   4x106Ω, 3.5x106Ω

4

5x106Ω, 3.5x106Ω

Explanation :
No Explanation available for this question

what is the minimum values of VCC and VEE such that transistors remain in the forward active region under zero-signal condition Assume that the dc common-mode input voltage is zer0.

1.  6.25 V

2.  12.5 V

3.  25 V

4.   48 V

4

12.5 V

Explanation :
No Explanation available for this question

The waveshape of V0 in the figure below will be

1.

2.

3.

4.

4

Explanation :
No Explanation available for this question

A zener diode works on the principle of

1.  Tunneling of charge carriers across the junction

2.  Thermionic emission

3.  Diffusion of charge carriers across the junction

4.  Hopping of charge carriers across the junction

4

Diffusion of charge carriers across the junction

Explanation :
No Explanation available for this question

Which of the following statements applies to the bisection method used for finding roots of functions

1.  Converges within a few iterations

2.  Converges to work for all continuous functions

3.  It is faster than the Newton-Raphson method

4.  Requires that there be no error in determining the signs of the function

4

Converges to work for all continuous functions

Explanation :
No Explanation available for this question

The depletion capacitance, CJ, of an abrupt p-n junction with constant doping on either side varies with reserve bias Vg,as

1.  CJαVg

2.  CJα VR-1

3.  CJα VR-1/2

4.  CJα VR-1/3

4

CJα VR-1/2

Explanation :
No Explanation available for this question

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