If input  signal ei applied to the OP-AMP of the circuit shown in the given  figure is sinusoidal at maximum value 1 mV and of 1kHz frequency, then magnitude of the peak value of the output voltage waveform would be

1.  1.59m V

2.  6.28m V

3.  159mV

4.   628 mV

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4
Correct Answer :

628 mV


Explanation :
No Explanation available for this question

The Newton’s-Raphson iterative formula for finding f(x)=x2-1, is

1.  

2.  

3.  

4.  

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4
Correct Answer :


Explanation :
No Explanation available for this question

A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semi conductor is n type with ND=1019per cm3.If excess electron concentration in the steady state is n=1015 per cm3 and if τp=10μsec(minority carrier life time)generation rate due to irradiation

1.  Is 1020e-h pairs/cm3/s

2.  Is 1024e-h pairs/cm3/s

3.  Is 1010e-h pairs/cm3/s

4.  Cannot be determined due to insufficient data

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4
Correct Answer :

Is 1020e-h pairs/cm3/s


Explanation :
No Explanation available for this question

The drift velocity of electrons, in silicon

1.  Is proportional to the electric field for all values of electric field

2.  Is dependent of the electric field

3.  Increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance

4.  Increases linearly with electric field at low values of electric field and gradually saturates at higher values of elecric field

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4
Correct Answer :

Increases linearly with electric field at low values of electric field and gradually saturates at higher values of elecric field


Explanation :
No Explanation available for this question

In a p-type silicon sample hold concentration is 2.25*1015/cm3.If intrinsic carrier concentration is 1.5*1010/cm3, and then electron concentration is

1.  Zero

2.  1010/cm3

3.  105/cm3

4.  1.5*1025/cm3

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4
Correct Answer :

105/cm3


Explanation :
No Explanation available for this question

The electron and hole concentrations in a intrinsic semiconductor are ni and pi respectively. When doped with p-type material, these changes to n and p respectively at 500C will be

1.  n+p= ni +pi

2.  n+ ni=p+ pi

3.  n pi= nip

4.  p= ni pi

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4
Correct Answer :

n+ ni=p+ pi


Explanation :
No Explanation available for this question

At 250c, a zener diode is rated at 2 watts.Its 8 power rating at 500C will be

1.  2 watts

2.  1 watt

3.  Greater than 2 watts

4.  None of these

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4
Correct Answer :

2 watts


Explanation :
No Explanation available for this question

If an intrinsic semiconductor is doped with a very small amount of boron, then in the extrinsic semiconductor so formed, then number of electrons and holes will

1.  Decrease

2.  Increse and decrease respectively

3.  Increase

4.  Decrease and increase and increase respectively

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4
Correct Answer :

Decrease and increase and increase respectively


Explanation :
No Explanation available for this question

A sample of silicon at T=300K is doped with boron at a concentration of 2.5*1013cm-3 and with arsenic at a concentration of 1*1013cm-3. The material is

1.  p-type with p0=1.5*1013cm-3

2.  p-type with  p0=1.5*107cm-3

3.  n- type with n0= p0=1.5*1013cm-3

4.  n-type with  n0=1.5*107cm-3

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4
Correct Answer :

p-type with p0=1.5*1013cm-3


Explanation :
No Explanation available for this question

In a sample of galium arsenide at T= 200K, n0=5p0 and Na=0.The value of n0 is

1.  9.86* 109cm-3

2.  7 cm-3

3.  4.86*103cm-3

4.  3.3 cm-3

View Answer  
4
Correct Answer :

3.3 cm-3


Explanation :
No Explanation available for this question
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