# If input  signal ei applied to the OP-AMP of the circuit shown in the given  figure is sinusoidal at maximum value 1 mV and of 1kHz frequency, then magnitude of the peak value of the output voltage waveform would be

1.  1.59m V

2.  6.28m V

3.  159mV

4.   628 mV

4

628 mV

Explanation :
No Explanation available for this question

# The Newton’s-Raphson iterative formula for finding f(x)=x2-1, is

1.

2.

3.

4.

4 Explanation :
No Explanation available for this question

# A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semi conductor is n type with ND=1019per cm3.If excess electron concentration in the steady state is n=1015 per cm3 and if τp=10μsec(minority carrier life time)generation rate due to irradiation

1.  Is 1020e-h pairs/cm3/s

2.  Is 1024e-h pairs/cm3/s

3.  Is 1010e-h pairs/cm3/s

4.  Cannot be determined due to insufficient data

4

Is 1020e-h pairs/cm3/s

Explanation :
No Explanation available for this question

# The drift velocity of electrons, in silicon

1.  Is proportional to the electric field for all values of electric field

2.  Is dependent of the electric field

3.  Increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance

4.  Increases linearly with electric field at low values of electric field and gradually saturates at higher values of elecric field

4

Increases linearly with electric field at low values of electric field and gradually saturates at higher values of elecric field

Explanation :
No Explanation available for this question

# In a p-type silicon sample hold concentration is 2.25*1015/cm3.If intrinsic carrier concentration is 1.5*1010/cm3, and then electron concentration is

1.  Zero

2.  1010/cm3

3.  105/cm3

4.  1.5*1025/cm3

4

105/cm3

Explanation :
No Explanation available for this question

# The electron and hole concentrations in a intrinsic semiconductor are ni and pi respectively. When doped with p-type material, these changes to n and p respectively at 500C will be

1.  n+p= ni +pi

2.  n+ ni=p+ pi

3.  n pi= nip

4.  p= ni pi

4

n+ ni=p+ pi

Explanation :
No Explanation available for this question

# At 250c, a zener diode is rated at 2 watts.Its 8 power rating at 500C will be

1.  2 watts

2.  1 watt

3.  Greater than 2 watts

4.  None of these

4

2 watts

Explanation :
No Explanation available for this question

# If an intrinsic semiconductor is doped with a very small amount of boron, then in the extrinsic semiconductor so formed, then number of electrons and holes will

1.  Decrease

2.  Increse and decrease respectively

3.  Increase

4.  Decrease and increase and increase respectively

4

Decrease and increase and increase respectively

Explanation :
No Explanation available for this question

# A sample of silicon at T=300K is doped with boron at a concentration of 2.5*1013cm-3 and with arsenic at a concentration of 1*1013cm-3. The material is

1.  p-type with p0=1.5*1013cm-3

2.  p-type with  p0=1.5*107cm-3

3.  n- type with n0= p0=1.5*1013cm-3

4.  n-type with  n0=1.5*107cm-3

4

p-type with p0=1.5*1013cm-3

Explanation :
No Explanation available for this question

# In a sample of galium arsenide at T= 200K, n0=5p0 and Na=0.The value of n0 is

1.  9.86* 109cm-3

2.  7 cm-3

3.  4.86*103cm-3

4.  3.3 cm-3

4