# The grain bandwidth product of a two stage CE amplifier is

1.  Same aas that of one stage

2.  Greater than  that of one stage

3.  Lessthan that of one stage

4.   Product of the two gain bandwidth products of each stage

4

Same aas that of one stage

Explanation :
No Explanation available for this question

# In the transistor circuit shown below, the collector to ground voltage is +20V.The possible condition is

1.  Collector-emitter terminals shorted

2.  Emitter to ground connection open

3.  10 kilo-ohms resistor open

4.  Collector-base terminals shorted

4

Emitter to ground connection open

Explanation :
No Explanation available for this question

# Inn the following two non-linear transistor biasing circuits, the resistors

1.  RA and RB, both have negative temperature coefficient

2.  RA and RB, both have positive   temperature coefficient

3.  RA has negative temperature coefficient  and RB has positive temperature coefficient

4.   RA  has positive temperature coefficient and RB has negative temperature coefficient.

4

RA has negative temperature coefficient  and RB has positive temperature coefficient

Explanation :
No Explanation available for this question

# In the circuit shown in the given figure, assuming that the capacitor C is almost shorted for the frequency range of interest of the input signal, voltage gain of the amplifier will be approximately

1.  0.33

2.  0.5

3.  0.66

4.   1

4

1

Explanation :
No Explanation available for this question

# What will be the input independence Zi for the network shown below

1.  560.5Ω

2.  56.05Ω

3.  937Ω

4.   617.7Ω

4

560.5Ω

Explanation :
No Explanation available for this question

# If an npn transistor has a beta cut-off frequency fB of 1MHz, and emitter short circuit low-frequency current gain β0 of 200, then unity gain frequency fT nd alpha c off frequency fa respectively are

1.  200 MHz,201 MHz

2.  200 MHz,1999 MHz

3.  199MHz,200 MHz

4.   201 MHz,200 MHz

4

200 MHz,201 MHz

Explanation :
No Explanation available for this question

# If an npn transistor (with c=0.3pF) has unity gain cut-off frequency fT of 400MHz at a d.c. bias current. Ic=1mA, then value of its cμ is approximately(VT=26mV)

1.  15

2.  30

3.  50

4.   96

4

15

Explanation :
No Explanation available for this question

# The voltage VCB and current IB for the CB-configuration of the figure shown below will be

1.  3.4V and 45.8μA

2.  6V, and 2.75mA

3.  34V and 4.5mA

4.   None of these

4

3.4V and 45.8μA

Explanation :
No Explanation available for this question

# mirror current I of the given circuit is

1.  10.27mA

2.  12.53mA

3.  0.636mA

4.  10.90mA

4

10.27mA

Explanation :
No Explanation available for this question

1.  3mA

2.  2.81mA

3.  6.16mA

4.  10mA

4