1. [100]
2. [101]
3. [110]
4. [111]
[110]
1. At lower temperature compared to diffusion
2. At Higher temperature compared to diffusion
3. Almost at same temperature compared to diffusion
4. None of these
At lower temperature compared to diffusion
1. Higher compared to PMOS
2. Lesser compared to PMOS
3. Same with PMOS
4. May be higher as well as lesser depending on certain conditions
Higher compared to PMOS
1. Less soluble in a developer solution
2. More soluble in a developer solution
3. positive photo resist under UV exposure
4. None of the above
Less soluble in a developer solution
1. In ion implantation to repair the lattice damage
2. In diffusion to increase diffusivity
3. In crystal growth for cleaning
4. None of these
In ion implantation to repair the lattice damage
1. (0.6-0.8)nm
2. (0.01-0.)nm
3. (.3-.4)nm
(.3-.4)nm
1. H2o2
2. NH4oh
3. HCL
4. H2so4
H2o2
1. The sum of resistance values of n material and p material
2. The sum of half the resistance values of n material and p material
3. Equivalent resistance values of n material and p material in parallel
4. d. None of these
The sum of resistance values of n material and p material
1. 2,4,3,1
2. 4,2,3,1
3. 1,4,2,3
4. 1,2,3,4
1,4,2,3
1. 3 Alone
2. 1 and 3
3. 1 and 2
4. 2 alone
1 and 2