Two identical FETS each characterized by the parameter gm and rd are connected in parallel. The composite FET is then characterized by the parameter.

1.  

2.  

3.  

4.  

View Answer  
4
Correct Answer :


Explanation :
No Explanation available for this question

In the MOSFET amplifier shown below, the signal output V1 and V2 obey the relationship.

1.  V1 = V2/2

2.  V1 = - V2/2

3.  V1 = 2V2

4.  V1 =- 2V2

View Answer  
4
Correct Answer :

V1 =- 2V2


Explanation :
No Explanation available for this question

The trans conductance gm of a FET in the saturation region is

1.  

2.  

3.  

4.  

View Answer  
4
Correct Answer :


Explanation :
No Explanation available for this question

For an n channel JFET, having drain source voltage constant if the gate-source voltage is increased (more negative) pinch off would occur for

1.  High value of drain current

2.  Saturation value of drain current

3.  Zero drain current

4.  Gate current equal to drain current

View Answer  
4
Correct Answer :

Saturation value of drain current


Explanation :
No Explanation available for this question

In modern MOSFET’s the material used for the gate is

1.  High quality silicon

2.  High purity silica

3.  Heavily doped poly crystalline silicon

4.  Epitaxial grown silicon

View Answer  
4
Correct Answer :

Heavily doped poly crystalline silicon


Explanation :
No Explanation available for this question

Consider the following devices 1. BJT in CB mode 2. BJT in CE mode 3. JFET 4. MOSFET The correct sequence of device in increasing order of their input impedance is

1.  1, 2, 3, 4

2.  2, 1, 3, 4

3.  2, 1, 4, 3

4.  1, 3, 2, 4

View Answer  
4
Correct Answer :

1, 2, 3, 4


Explanation :
No Explanation available for this question

For silicon the critical electrical field at break field at breakdown is EC=5*105V/cm. Breakdown voltage is 25V.The maximum n_type doping concentration is given by

1.  3*1026cm-3

2.  3*1016cm-3

3.  3*1018cm-3

4.  3*1014cm-3

5.  0

6.  1

7.  5

8.  2

9.  3

View Answer  
9
Correct Answer :

2


Explanation :
No Explanation available for this question

For a uniform doped SI pn junction the dopant profile is Na=Nd=5*1016cm-3if peak electric field in the junction at breakdown is E=3*105V/m, the break down voltage is

1.  5V

2.  6.7V

3.  10.67V

4.  12.45V

5.  81

6.  91

7.  71

8.  72

9.  None of these

View Answer  
9
Correct Answer :

71


Explanation :
No Explanation available for this question

The doping concentration for a p*n junction is ND=5*105cm-3.The minimum width of n-regiion such that avalanche breakdown occurs before the depletion region an obric contract VB=90V is

1.  4.50

2.  4.82

3.  5.00

4.  5.12

5.  2572

6.  1863

7.  2573

8.  1858

9.  None of these

View Answer  
9
Correct Answer :

None of these


Explanation :
No Explanation available for this question

For the following values of current measured in a uniformly doped npn bipolar transistor: InE=120mA,IpE=0.10mA,InC=1.18mA IR=0.20mA,IG=1A,IpC=1 A The value of α is

1.  0.733

2.  0.667

3.  0.8

4.  0.787

5.  15,95

6.  95

7.  Both a and b

8.  15,95 and 12345

9.  None of these

View Answer  
9
Correct Answer :

15,95


Explanation :
No Explanation available for this question
Previous Next

Interview Questions

MongoDB
Java Script
Node JS
PHP
JQuery
Python