# Two identical FETS each characterized by the parameter gm and rd are connected in parallel. The composite FET is then characterized by the parameter.

1.

2.

3.

4.

4

Explanation :
No Explanation available for this question

# In the MOSFET amplifier shown below, the signal output V1 and V2 obey the relationship.

1.  V1 = V2/2

2.  V1 = - V2/2

3.  V1 = 2V2

4.  V1 =- 2V2

4

V1 =- 2V2

Explanation :
No Explanation available for this question

# The trans conductance gm of a FET in the saturation region is

1.

2.

3.

4.

4

Explanation :
No Explanation available for this question

# For an n channel JFET, having drain source voltage constant if the gate-source voltage is increased (more negative) pinch off would occur for

1.  High value of drain current

2.  Saturation value of drain current

3.  Zero drain current

4.  Gate current equal to drain current

4

Saturation value of drain current

Explanation :
No Explanation available for this question

# In modern MOSFET’s the material used for the gate is

1.  High quality silicon

2.  High purity silica

3.  Heavily doped poly crystalline silicon

4.  Epitaxial grown silicon

4

Heavily doped poly crystalline silicon

Explanation :
No Explanation available for this question

# Consider the following devices 1. BJT in CB mode 2. BJT in CE mode 3. JFET 4. MOSFET The correct sequence of device in increasing order of their input impedance is

1.  1, 2, 3, 4

2.  2, 1, 3, 4

3.  2, 1, 4, 3

4.  1, 3, 2, 4

4

1, 2, 3, 4

Explanation :
No Explanation available for this question

# For silicon the critical electrical field at break field at breakdown is EC=5*105V/cm. Breakdown voltage is 25V.The maximum n_type doping concentration is given by

1.  3*1026cm-3

2.  3*1016cm-3

3.  3*1018cm-3

4.  3*1014cm-3

5.  0

6.  1

7.  5

8.  2

9.  3

9

2

Explanation :
No Explanation available for this question

# For a uniform doped SI pn junction the dopant profile is Na=Nd=5*1016cm-3if peak electric field in the junction at breakdown is E=3*105V/m, the break down voltage is

1.  5V

2.  6.7V

3.  10.67V

4.  12.45V

5.  81

6.  91

7.  71

8.  72

9.  None of these

9

71

Explanation :
No Explanation available for this question

# The doping concentration for a p*n junction is ND=5*105cm-3.The minimum width of n-regiion such that avalanche breakdown occurs before the depletion region an obric contract VB=90V is

1.  4.50

2.  4.82

3.  5.00

4.  5.12

5.  2572

6.  1863

7.  2573

8.  1858

9.  None of these

9

None of these

Explanation :
No Explanation available for this question

# For the following values of current measured in a uniformly doped npn bipolar transistor: InE=120mA,IpE=0.10mA,InC=1.18mA IR=0.20mA,IG=1A,IpC=1 A The value of α is

1.  0.733

2.  0.667

3.  0.8

4.  0.787

5.  15,95

6.  95

7.  Both a and b

8.  15,95 and 12345

9.  None of these

9