# Value of IR is

1.  2.56mA

2.  0

3.  1.25mA

4.  1.96mA

4

1.96mA

Explanation :
No Explanation available for this question

# Value of V0 for the circuit shown below is

1.  12V

2.  11.3V

3.  11.7V

4.  None of these

4

11.7V

Explanation :
No Explanation available for this question

# Silicon is preferred over Ge because

1.  Silicon has higher PIV

2.  silicon is cost effective

3.  Silicon is found in abundance in nature

4.  None of these

4

None of these

Explanation :
No Explanation available for this question

# The above circuit is a

1.  ≥2Vm

2.  ≥Vm

3.  ≤ 2Vm

4.  ≥Vm

4

≥2Vm

Explanation :
No Explanation available for this question

# The above circuit is a

1.  Voltage Doubler

2.  Clamper

3.  Clipper

4.  Half wave rectifier

4

Clamper

Explanation :
No Explanation available for this question

# At room temperature , the value of volt equivalent of temperature becomes

1.  0.265V

2.  0.026V

3.  2.63V

4.  0.11V

4

0.026V

Explanation :
No Explanation available for this question

# In the fixed bias circuit .Find the value of RC&RB. The quiescent collector current and voltage values are 9.2mA and 4.4V respectively .The transistor has dc current gain of 115.VBE=0.7V & Vcc=0.9V

1.  250Ω,50kΩ

2.  100Ω,1MΩ

3.  500Ω,103.75kΩ

4.  1KΩ,105.5kΩ

4

500Ω,103.75kΩ

Explanation :
No Explanation available for this question

# For p- channel GeFET, a=2*10-4mc and channel resistivity p=2Ωcm calculate vp

1.  5.33V

2.  3.78mV

3.  6.5V

4.  Data insufficient

4

5.33V

Explanation :
No Explanation available for this question

# Find the threshold voltage for any ideal MOs device on p-type silicon with Na=1016cm-3 =11.8*8.85*10-14F/cm C0x=3.45*10-7F/cm2 ni=1.5*1010cm-3 KT/q=25.mV

1.  0.834V

2.  29mV

3.  15mV

4.  Data insufficient

4

0.834V

Explanation :
No Explanation available for this question

# Determine the range of values of v that wil maintain the zener diode in the ON state

1.  23.6to 36.8V

2.  25-40V

3.  100-115V

4.  None of these

4