For silicon PN junction diode Electron diffusion constant =15cm2/sec Hole diffusion constant =10cm2/sec Mean life time of electron =9*10-6sec Mean life time of hole=4*10-6 sec If 80 % of total current in depletion region is carried out by electron then find out ratio (Nd/Na)

1.  0.20

2.  0.56

3.  2.36

4.  3.26

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4
Correct Answer :

0.20


Explanation :
No Explanation available for this question

If the reverse saturation current of silicon diode at 250C is 20 nA, then the reverse saturation current at 600C will be

1.  20*4.5nA

2.  20*e4.5nA

3.  20*2.20.5nA

4.  20*(4.5)2nA

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4
Correct Answer :

20*2.20.5nA


Explanation :
No Explanation available for this question

Magnitude of hall voltage vH in an n-type germanium having majority carrier concentration ND=1017cm-3 BX=0.1Wb/m2 d=3mm ex=5v/cm will be

1.  47mV

2.  57mV

3.  55mv

4.  58.4mV

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4
Correct Answer :

58.4mV


Explanation :
No Explanation available for this question

Match the lists in the List-I and List II in respect to JFET List-I List-2 P.N-channel is better than p channel 1. Low leakage current at the gate terminal Q. channel is not completed 2. Better frequency performance. Closed at pinch –off R. channel is wedge shaped 3. Reverse bias increase the channel resistance S. Input impedance is high 4. High electric field near the drain and directed towards source

1.  P-2,Q-3,R-4,S-1

2.  P-2,Q-4,R-3,S-1

3.  P-1,Q-3,R-4,S-2

4.  P-1,Q-4,R-3,S-2

View Answer  
4
Correct Answer :

P-2,Q-3,R-4,S-1


Explanation :
No Explanation available for this question

Depletion layer width ___ under __condition__under ____condition

1.  Decrease, forward biased, Increase, reverse biased

2.  Increase, reverse biased, decrease, reverse biased

3.  Decrease, reverse biased, Increase, forward biased

4.  None of these

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4
Correct Answer :

Decrease, forward biased, Increase, reverse biased


Explanation :
No Explanation available for this question

For tunnel diode, the I-V characteristic reveals a region of negative slope when diode is forward biased, this is due to

1.  Avalanche effect

2.  Quantum mechanical tunneling effect

3.  Photonic effect

4.  None of these

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4
Correct Answer :

Quantum mechanical tunneling effect


Explanation :
No Explanation available for this question

Diffusion and in implantation are used for

1.  Difference purpose in fabrication of IC’S

2.  Same purpose in fabrication of IC’s

3.  Totally difference purpose in different technology

4.  None of these

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4
Correct Answer :

Same purpose in fabrication of IC’s


Explanation :
No Explanation available for this question

The negative feedback in an amplifier

1.  Reduces the voltage gain

2.  Increases the voltage gain

3.  Does not affect the voltage gain

4.  Can convert it into an oscillator if the amount of feedback is sufficient

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4
Correct Answer :

Reduces the voltage gain


Explanation :
No Explanation available for this question

Find the value of I & V in the circuits Shown (Assume diode is Ideal)

1.  2mA, OV

2.  4mA, 2V

3.  4mA, 5V

4.  None

View Answer  
4
Correct Answer :

2mA, OV


Explanation :
No Explanation available for this question

In a common emitter amplifier the unbypassed emitter resistance provides

1.  Voltage shunt feedback

2.   Current series feedback

3.   Current series feedback

4.   Current series feedback

View Answer  
4
Correct Answer :

Current series feedback


Explanation :
No Explanation available for this question
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