Circuit shown below has been in steady state when switch s is opened the current I is given by

1.  5e-t

2.  10e-2t

3.  5e-2t

4.  10e-t

View Answer  
4
Correct Answer :

10e-2t


Explanation :
No Explanation available for this question

A voltage V(t)=6e-2t is applied at t=0 to a series R-L circuit with L=1H. If i(t)=6[e-2t-e-3t] then what is value of R

1.  (2/3)Ω

2.  1Ω

3.  3Ω

4.  (1/3)Ω

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4
Correct Answer :

3Ω


Explanation :
No Explanation available for this question

In a certain PN junction formed from silicon donor concentration is 1015 and acceptor concentration is 1016

1.  will come down to center of forbidden energy gap

2.  may remain at its original position

3.  will go up in conduction band

4.  will have no effect due to temperature and doping concentration

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4
Correct Answer :

may remain at its original position


Explanation :
No Explanation available for this question

In the circuit shown below Vs=Cos 2t, z2=1+j, C1 is chosen such that i= (1/2) Cos 2t, then what is the value of C1

1.  2F

2.  1F

3.  0.5F

4.  0.25F

View Answer  
4
Correct Answer :

0.25F


Explanation :
No Explanation available for this question

In an-type semiconductor if temperature is increased and doping concentration is also increased , then Fermi level

1.  will come down to center of forbidden energy gap

2.  may remain at its original position

3.  will go up in conduction band

4.  will have no effect due to temperature and doping concentration

View Answer  
4
Correct Answer :

may remain at its original position


Explanation :
No Explanation available for this question

The region of operation for the transistor shown on the

1.  active

2.  Cutoff

3.  Inverse Active

4.  Saturation

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4
Correct Answer :

Cutoff


Explanation :
No Explanation available for this question

The region of operation for the transistor shown is

1.  active

2.  Cutoff

3.  Inverse Active

4.  Saturation

View Answer  
4
Correct Answer :

Saturation


Explanation :
No Explanation available for this question

An n- channel silicon JFET is having doping concentration of Na=3*16cm-3 and Nd=2*1015cm-3.The channel thickness dimensions is a=0.5m The internal pinch off voltage is

1.  2.86V

2.  4.86V

3.  3.86V

4.  5.86V

View Answer  
4
Correct Answer :

3.86V


Explanation :
No Explanation available for this question

An n- channel silicon JFET is having doping concentration of Na=3*16cm-3 and Nd=2*1015cm-3.The channel thickness dimensions is a=0.5m The pinch off voltage is

1.  2.50V

2.  4.50V

3.  3.50V

4.  5.50V

View Answer  
4
Correct Answer :

3.50V


Explanation :
No Explanation available for this question

An n type semiconductor with doping semiconductor with doping profile not uniform through out the semiconductor has the following semiconductor From one end to the middle of semiconductor Nd=1016cm-2 From other end to the middle of semiconductor Nd=1015cm-2 The built in potential which is existing at the middle point is

1.  0.05V

2.  0.634V

3.  0.06V

4.  0.63V

View Answer  
4
Correct Answer :

0.06V


Explanation :
No Explanation available for this question
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