# Circuit shown below has been in steady state when switch s is opened the current I is given by

1.  5e-t

2.  10e-2t

3.  5e-2t

4.  10e-t

4

10e-2t

Explanation :
No Explanation available for this question

# A voltage V(t)=6e-2t is applied at t=0 to a series R-L circuit with L=1H. If i(t)=6[e-2t-e-3t] then what is value of R

1.  (2/3)Ω

2.  1Ω

3.  3Ω

4.  (1/3)Ω

4

Explanation :
No Explanation available for this question

# In a certain PN junction formed from silicon donor concentration is 1015 and acceptor concentration is 1016

1.  will come down to center of forbidden energy gap

2.  may remain at its original position

3.  will go up in conduction band

4.  will have no effect due to temperature and doping concentration

4

may remain at its original position

Explanation :
No Explanation available for this question

# In the circuit shown below Vs=Cos 2t, z2=1+j, C1 is chosen such that i= (1/2) Cos 2t, then what is the value of C1

1.  2F

2.  1F

3.  0.5F

4.  0.25F

4

0.25F

Explanation :
No Explanation available for this question

# In an-type semiconductor if temperature is increased and doping concentration is also increased , then Fermi level

1.  will come down to center of forbidden energy gap

2.  may remain at its original position

3.  will go up in conduction band

4.  will have no effect due to temperature and doping concentration

4

may remain at its original position

Explanation :
No Explanation available for this question

# The region of operation for the transistor shown on the

1.  active

2.  Cutoff

3.  Inverse Active

4.  Saturation

4

Cutoff

Explanation :
No Explanation available for this question

# The region of operation for the transistor shown is

1.  active

2.  Cutoff

3.  Inverse Active

4.  Saturation

4

Saturation

Explanation :
No Explanation available for this question

# An n- channel silicon JFET is having doping concentration of Na=3*16cm-3 and Nd=2*1015cm-3.The channel thickness dimensions is a=0.5m The internal pinch off voltage is

1.  2.86V

2.  4.86V

3.  3.86V

4.  5.86V

4

3.86V

Explanation :
No Explanation available for this question

# An n- channel silicon JFET is having doping concentration of Na=3*16cm-3 and Nd=2*1015cm-3.The channel thickness dimensions is a=0.5m The pinch off voltage is

1.  2.50V

2.  4.50V

3.  3.50V

4.  5.50V

4

3.50V

Explanation :
No Explanation available for this question

1.  0.05V

2.  0.634V

3.  0.06V

4.  0.63V

4