# The value of di/dt(0+) in the circuit shown below is

1.  0

2.  10 A/s

3.  100 A/s

4.  None of these

4

10 A/s

Explanation :
No Explanation available for this question

# In a silicon a sample at T=300K, the hole concentration varies linearly with distance according to the graph shown below Diffusion current density Jp=0.175A/cm2 Hole diffusion coefficient Dp=15cm2/sec The hole concentration at X=0 is

1.  1.72391013

2.  1.26751013

3.  1.72391014

4.  1.26751014

4

1.72391014

Explanation :
No Explanation available for this question

# Out of various scattering mechanism existing in a semiconductor ,It is found two mechanism existing in a semiconductor ,It is found two mechanism are very prominent .Mobility due to these scattering mechanism working independent are 300cm2/V-s and 600cm2/v-s. The net mobility when both scattering mechanism works simultaneously is

1.  900cm2/v-s

2.  450cm2/v-s

3.  1800cm2/v-s

4.  200cm2/v-s

4

200cm2/v-s

Explanation :
No Explanation available for this question

# If a system is represented by the differential equation d2y/dt2+6(dy/dt)+9=0 then solution y will be of the form

1.  K1e-t+K2e-9t

2.  (K1+K2t)e-3t

3.  Ke-3tsin

4.  (K1+K2t)e3t

4

(K1+K2t)e-3t

Explanation :
No Explanation available for this question

# What will be the differential equation for the circuit given below

1.  dv/dt+V/3=i0

2.  dv/dt+V/3=(2/3)i0

3.  dv/dt+V= i0

4.  None of these

4

dv/dt+V/3=(2/3)i0

Explanation :
No Explanation available for this question

# What will be the form of the solution of the differential equationwhen equation a0x2+a1x+a2=0 has two distinct real roots?

1.  A1e-k.t+A2e-k2t+c

2.  (A1+tA2)e-kt+c

3.  A1e-kt(A2sin wt-A3cos wt)+c

4.  None of these

4

A1e-k.t+A2e-k2t+c

Explanation :
No Explanation available for this question

# What will be the form of the solution of the differential equation, when equation a0x2+a1x+a2=0 has two equal real roots?

1.  A1 e-k1t +A2e-k2t +c

2.  (A1+A2t)e-kt+c

3.  A1Cosωt+A2Cosωt+c

4.  None of these

4

(A1+A2t)e-kt+c

Explanation :
No Explanation available for this question

# What will be the form of the solution of the differential equation, when equation a0x2+a1x+a2=0 has two conjugate imaginary roots?

1.  A1 e-k1t +A2e-k2t +c

2.  (A1+A2t)e-kt+c

3.  A1Cosωt+A2Cosωt+c

4.  None of these

4

A1Cosωt+A2Cosωt+c

Explanation :
No Explanation available for this question

# What is the time constant of the given circuit

1.  0.9sec

2.  0.25sec

3.  0.5sec

4.  1sec

4

0.25sec

Explanation :
No Explanation available for this question

# N-type semiconductor of silicon contains donor concentration of Nd=4.5*1017cm-3.The mobility carrier hole lifetime is=5s Thermal equilibrium generation rate of electron will be

1.  0.1109cm-3S-1

2.  0.1108cm-3S-1

3.  0.2109cm-3S-1

4.  0.2108cm-3S-1

4