# Consider  the  following  two  statements  about  the  internal  conditions  in  an  n-channel MOSFET operating in the active region S1:   The inversion charge decreases from source to drain S2:   The channel potential increases from source to drain Which of the following is correct

1.  Only S2 is true

2.  Both S1 and S2 are false

3.  Both S1 and S2 are true, but S2 is not a reason for S1

4.  Both S1 and S2 are true, and S2 is a reason for S1

4

Both S1 and S2 are true, and S2 is a reason for S1

Explanation :
No Explanation available for this question

# For  the  circuit  shown  in  the  following  figure,  transistors M1  and M2  are  identical NMOS transistors. Assume the M2 is in saturation and the output is unloaded The current Ix is related to Ibias as

1.  Ix = Ibias + Is

2.  Ix = Ibias

3.  Ix = Ibias - Is

4.  Ix = Ibias - (VDD - (Vout/RE))

4

Ix = Ibias

Explanation :
No Explanation available for this question

# In the following astable multivibrator circuit, which properties of V0(t) depend on R2

1.  Only the frequency

2.  Only the amplitude

3.  Both the amplitude and the frequency

4.  Neither the amplitude nor the frequency

4

Only the frequency

Explanation :
No Explanation available for this question

# In the circuit shown below, the op-amp is ideal, the transistor has VBE = 0.6V and β = 150. Decide  whether  the  feedback  in  the  circuit  is  positive  or  negative  and  determine  the voltage V at the output of the op-amp

1.  Positive feedback, V = 10 V

2.  Positive feedback, V = 0 V

3.  Negative feedback, V = 5 V

4.  Negative feedback, V = 2 V

4

Negative feedback, V = 2 V

Explanation :
No Explanation available for this question

# The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against  the gate voltage VG at a constant drain voltage VD. Which of  the  following figures represents the expected dependence of gm on VG

1.

2.

3.

4.

4 Explanation :
No Explanation available for this question

# A small signal source Vi (t) = A cos 20t + B sin 106t  is applied  to a  transistor amplifier as shown  below.  The  transistor  has  β  =  150  and  h ie  =  3k Ω.  Which  expression  best approximates V0 (t)

1.  V0 (t) = -1500 (A cos 20t + B sin 106t)

2.  V0 (t) = -150 (A cos 20t + B sin 106t)

3.  V0 (t) = -1500B sin 106t

4.  V0 (t) = -150B sin 106t

4

V0 (t) = -150B sin 106t

Explanation :
No Explanation available for this question

# If X = 1 in the logic equation

1.  Y = Z

2.

3.  Z = 1

4.  Z = 0

4

Z = 0

Explanation :
No Explanation available for this question

# Consider the following circuit using an ideal OPAMP. The I-V characteristics of the diode is described by the relation where VT = 25 mV, I0 = 1µA and V  is  the voltage across the diode (taken as positive for forward bias) For an input voltage VT = -I V, the output voltage V0 is

1.  0 V

2.  0.1 V

3.  0.7 V

4.  1.1 V

4

0.1 V

Explanation :
No Explanation available for this question

# The OPAMP circuit shown above represents a

1.  high pass filter

2.  low pass filter

3.  band pass filter

4.  band reject filter

4

low pass filter

Explanation :
No Explanation available for this question

# Two  identical  NMOS  transistors  M1  and  M2  are  connected  as  shown  below.  Vbias  is chosen so that both transistors are in saturation. The equivalent gm of the pair is defined to be (∂Iout/(∂Vi) at constant Vout. The equivalent gm of the pair is

1.  the sum of individual gm's of the transistors

2.  the product of individual gm's of the transistors

3.  nearly equal to the gm of M1

4.  nearly equal to gm/go of M2

4