# The Boolean function realized by the logic circuit shown is

1.  F=∑m(0,1,3,5,9,10,14)

2.  F=∑m( 2,3,5,7,8,12,13)

3.  F=∑m(1,2,4,5,11,14,15)

4.  F=∑m(2,3,5,7,8,9,12)

4

F=∑m(2,3,5,7,8,9,12)

Explanation :
No Explanation available for this question

# Which of the following is true

1.  A silicon wafer heavily doped with boron is a p+ substrate

2.  A silicon wafer lightly doped with boron is a p+ substrate

3.  A silicon wafer heavily doped with arsenic is a p+ substrate

4.  A silicon wafer lightly doped with arsenic is a p+ substrate

4

A silicon wafer heavily doped with boron is a p+ substrate

Explanation :
No Explanation available for this question

# A continuous time LTI system is described by  Assuming zero initial conditions,the response y (t) of the above system for the input x(t)=e-2t u(t) is given by

1.  (et-e3t) u(t)

2.  (et-e-3t) u(t)

3.  (et+e-3t) u(t)

4.  (et+e3t) u(t)

4

(et-e-3t) u(t)

Explanation :
No Explanation available for this question

# Consider the following statements: S1: The system is stable and casual for ROC |z|>(1/2) S2: The system is stable but nor causal for ROC: |z|>(1/4) S3: The system is neither stable nor causal for ROC:(1/4)

1.  Both S1 and S2 are true

2.  Both S2 and S3 are true

3.  Both S1 and S3 are true

4.  S1, S2 and S3 are all true

4

Both S1 and S3 are true

Explanation :
No Explanation available for this question

# For static electric and magnetic fields in an inhomogeneous source-free medium, whic the following represents the correct form of two of Maxwell's equations

1.  . E = 0       x B = 0

2.  . E = 0       . B = 0

3.  x E = 0       x B = 0

4.  x E = 0       . B = 0

4

x E = 0       . B = 0

Explanation :
No Explanation available for this question

1.  400 Hz

2.  600 Hz

3.  1200 Hz

4.  1400 Hz

4

1200 Hz

Explanation :
No Explanation available for this question

# In the following limiter circuit, an input voltage Vi= 10 sin 100pt is applied. Assume that the diode drop is 0.7 V when it is forward biased. The Zener breakdown voltage is 6.8 V. The maximum and minimum values of the output voltage respectively are

1.  6.1 V, -0.7 V

2.  0.7 V, -7.5 V

3.  7.5 V, -0.7 V

4.  7.5 V, -7.5 V

4

7.5 V, -0.7 V

Explanation :
No Explanation available for this question

# X(t) is a stationary process with the power spectral density SX(f)>0,  for all f . The process is passed through a system shown below Let SY(f) be the power spectral density of Y(t). Which one of the following statements is correct

1.  SY(f)>0 for all f

2.  SY(f)=0 for |f|>1 kHz

3.  SY(f)=0 for f=nf0, f0=2 kHz, n any integer

4.  SY(f)=0 for f=(2n+1), f0=1 kHz, n any integer

4

SY(f)=0 for f=(2n+1), f0=1 kHz, n any integer

Explanation :
No Explanation available for this question

# A  silicon wafer  has  100  nm  of  oxide  on  it  and  is  inserted  in  a  furnace  at  a  temperatureabove 1000°C for further oxidation in dry oxygen. The oxidation rate

1.  is independent of current oxide thickness and temperature

2.  is independent of current oxide thickness but depends on temperature

3.  slows down as the oxide grows

4.  is zero as the existing oxide prevents further oxidation

4

slows down as the oxide grows

Explanation :
No Explanation available for this question

# The drain current of a MOSFET  in saturation  is given by  ID = K(VGS  - VT)2 where K  is a constant. The magnitude of the transconductance gm is

1.  (K(VGS - VT)2

2.  2K(VGS - VT)

3.  ID/(VGS - VDS)

4.  (K(VGS - VT)2)/VGS

4