1. F=∑m(0,1,3,5,9,10,14)
2. F=∑m( 2,3,5,7,8,12,13)
3. F=∑m(1,2,4,5,11,14,15)
4. F=∑m(2,3,5,7,8,9,12)
F=∑m(2,3,5,7,8,9,12)
1. A silicon wafer heavily doped with boron is a p+ substrate
2. A silicon wafer lightly doped with boron is a p+ substrate
3. A silicon wafer heavily doped with arsenic is a p+ substrate
4. A silicon wafer lightly doped with arsenic is a p+ substrate
A silicon wafer heavily doped with boron is a p+ substrate
1. (et-e3t) u(t)
2. (et-e-3t) u(t)
3. (et+e-3t) u(t)
4. (et+e3t) u(t)
(et-e-3t) u(t)
1. Both S1 and S2 are true
2. Both S2 and S3 are true
3. Both S1 and S3 are true
4. S1, S2 and S3 are all true
Both S1 and S3 are true
1. . E = 0 x B = 0
2. . E = 0 . B = 0
3. x E = 0 x B = 0
4. x E = 0 . B = 0
x E = 0 . B = 0
1. 400 Hz
2. 600 Hz
3. 1200 Hz
4. 1400 Hz
1200 Hz
1. 6.1 V, -0.7 V
2. 0.7 V, -7.5 V
3. 7.5 V, -0.7 V
4. 7.5 V, -7.5 V
7.5 V, -0.7 V
1. SY(f)>0 for all f
2. SY(f)=0 for |f|>1 kHz
3. SY(f)=0 for f=nf0, f0=2 kHz, n any integer
4. SY(f)=0 for f=(2n+1), f0=1 kHz, n any integer
SY(f)=0 for f=(2n+1), f0=1 kHz, n any integer
1. is independent of current oxide thickness and temperature
2. is independent of current oxide thickness but depends on temperature
3. slows down as the oxide grows
4. is zero as the existing oxide prevents further oxidation
slows down as the oxide grows
1. (K(VGS - VT)2
2. 2K(VGS - VT)
3. ID/(VGS - VDS)
4. (K(VGS - VT)2)/VGS
2K(VGS - VT)