In a step graded reverse biased p-n junction the width of depletion layer varies as (Vj is the magnitude o fjunction potential

1.  

2.  Vj

3.  Vj2

4.  Vj-1

5.  3

6.  23

7.  13

8.  33

View Answer  
8
Correct Answer :

13


Explanation :
No Explanation available for this question

2 identical FETs, each characterized by parameters gm and rd are connected in parallel for a composite FET, the parameters will be

1.   gm/2 & 2rd

2.  gm/2 & rd/2

3.  2gm/rd/2

4.  2gm/2rd

5.  1008

6.  1015

7.  1022

8.  1032

View Answer  
8
Correct Answer :

1015


Explanation :
No Explanation available for this question

Dynamic resistance of a diode varies as

1.  I-2

2.  I-1

3.  I

4.  I2

5.  1521

6.  1667

7.  2119

8.  None of these

View Answer  
8
Correct Answer :

None of these


Explanation :
No Explanation available for this question

In a forward biased p-n junction diode if NA>>ND the diffusion current I equals where Tp the lifetime of holes,Q is the diffusion current I equals where Tp the life time of holes ,Q is the injection excess minority carriers

1.  QTp

2.  Q/Tp

3.  Q/ Tp2

4.  QT2p

5.  2 and 4

6.  8 and 6

7.  6 and 4

8.  8 and 10

View Answer  
8
Correct Answer :

8 and 6


Explanation :
No Explanation available for this question

In the given circuit, |IR|=5A |IL|=8A |IC|=3A Then what will be the value of I taking Vi as reference

1.  

2.  

3.  

4.  

5.  4

6.  7

7.  9

8.  13

View Answer  
8
Correct Answer :

4


Explanation :
No Explanation available for this question

What would be the potential a node a

1.  15V

2.  30V

3.  5V

4.  10V

View Answer  
4
Correct Answer :

15V


Explanation :
No Explanation available for this question

A Silicon n MOSFET has a threshold voltage of 1V and oxide thickness of 400. The region under the gate is ion implanted for threshold voltage tailoring. The close and type of implement required to shift threshold voltage to -1v are [εr(Si02)=10-13]

1.  1.08x10-13/cm2, p-type

2.  5.4x1012/cm2, p-type

3.  1.08x10-13/cm2, n-type

4.  None of these

View Answer  
4
Correct Answer :

None of these


Explanation :
No Explanation available for this question

In common emitter BJT amplifier, maximum usable supply voltage is limited by

1.  Avalanche breakdown of BE junction

2.  Collector-base breakdown voltage with emitter open

3.  Collector-emitter breakdown voltage with base open

4.  Zener breakdown voltage and early effect

View Answer  
4
Correct Answer :

Collector-emitter breakdown voltage with base open


Explanation :
No Explanation available for this question

We double the voltage sources in the Va would be as compared to previous one will be

1.  Doubled

2.  4 times

3.  Same

4.  None of these

View Answer  
4
Correct Answer :

Doubled


Explanation :
No Explanation available for this question

In a JFET, match the following A)Pinch-off decreases i) If channel doping reduced B)Trans-conductance increases ii)If channel length increased C)Transit time of carriers in channel is reduced iii)If channel conductivity increased iv) If channel length reduced v) If gate area reduced

1.  A-(i), B-(iv), C-(iii)

2.  A-(i), B-(iii), C-(v)

3.  A-(i), B-(iv), C-(v)

4.  A-(ii), B-(iv), C-(v)

View Answer  
4
Correct Answer :

A-(i), B-(iv), C-(v)


Explanation :
No Explanation available for this question
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