# In a step graded reverse biased p-n junction the width of depletion layer varies as (Vj is the magnitude o fjunction potential

1.

2.  Vj

3.  Vj2

4.  Vj-1

5.  3

6.  23

7.  13

8.  33

8

13

Explanation :
No Explanation available for this question

# 2 identical FETs, each characterized by parameters gm and rd are connected in parallel for a composite FET, the parameters will be

1.   gm/2 & 2rd

2.  gm/2 & rd/2

3.  2gm/rd/2

4.  2gm/2rd

5.  1008

6.  1015

7.  1022

8.  1032

8

1015

Explanation :
No Explanation available for this question

# Dynamic resistance of a diode varies as

1.  I-2

2.  I-1

3.  I

4.  I2

5.  1521

6.  1667

7.  2119

8.  None of these

8

None of these

Explanation :
No Explanation available for this question

# In a forward biased p-n junction diode if NA>>ND the diffusion current I equals where Tp the lifetime of holes,Q is the diffusion current I equals where Tp the life time of holes ,Q is the injection excess minority carriers

1.  QTp

2.  Q/Tp

3.  Q/ Tp2

4.  QT2p

5.  2 and 4

6.  8 and 6

7.  6 and 4

8.  8 and 10

8

8 and 6

Explanation :
No Explanation available for this question

# In the given circuit, |IR|=5A |IL|=8A |IC|=3A Then what will be the value of I taking Vi as reference

1.

2.

3.

4.

5.  4

6.  7

7.  9

8.  13

8

4

Explanation :
No Explanation available for this question

# What would be the potential a node a

1.  15V

2.  30V

3.  5V

4.  10V

4

15V

Explanation :
No Explanation available for this question

# A Silicon n MOSFET has a threshold voltage of 1V and oxide thickness of 400. The region under the gate is ion implanted for threshold voltage tailoring. The close and type of implement required to shift threshold voltage to -1v are [εr(Si02)=10-13]

1.  1.08x10-13/cm2, p-type

2.  5.4x1012/cm2, p-type

3.  1.08x10-13/cm2, n-type

4.  None of these

4

None of these

Explanation :
No Explanation available for this question

# In common emitter BJT amplifier, maximum usable supply voltage is limited by

1.  Avalanche breakdown of BE junction

2.  Collector-base breakdown voltage with emitter open

3.  Collector-emitter breakdown voltage with base open

4.  Zener breakdown voltage and early effect

4

Collector-emitter breakdown voltage with base open

Explanation :
No Explanation available for this question

# We double the voltage sources in the Va would be as compared to previous one will be

1.  Doubled

2.  4 times

3.  Same

4.  None of these

4

Doubled

Explanation :
No Explanation available for this question

# In a JFET, match the following A)Pinch-off decreases i) If channel doping reduced B)Trans-conductance increases ii)If channel length increased C)Transit time of carriers in channel is reduced iii)If channel conductivity increased iv) If channel length reduced v) If gate area reduced

1.  A-(i), B-(iv), C-(iii)

2.  A-(i), B-(iii), C-(v)

3.  A-(i), B-(iv), C-(v)

4.  A-(ii), B-(iv), C-(v)

4