A range of Ge is doped to the extent of 1014 donor atoms/cm4.At the temperature of the sample ,the resistivity of pure Ge is 600 Ge. If the applied electrical field is 2V/cm. find the total conduction current density

1.  15.2 mA/cm

2.  52.3 mA/cm2

3.  60.5 mA/cm2

4.  Data insufficient

View Answer  
4
Correct Answer :

52.3 mA/cm2


Explanation :
No Explanation available for this question

It is required to design an anti aliasing filter for an 8-bit ADC. The filter is a first order RC filter with R=1 and C=1F. The ADC is designed to span a sinusoidal signal with peak-to-peak amplitude equal to the full-scale range of the ADC.

1.  (1)/(1+SRC), -20dB/decade

2.  (1+SRC), -40dB/decade

3.  (1)/(1+SRC), -40dB/decade

4.  (SRC)/(1+SRC), -20Db/decade

View Answer  
4
Correct Answer :

(1)/(1+SRC), -20dB/decade


Explanation :
No Explanation available for this question

A sample of intrinsic Ge at room temperature has a carrier concentration of 3.4*1019/m3,determine the hole concentration

1.  4.62*1023/m3

2.  3.25*1015/m3

3.  2.31*1016/m3

4.  38.5*1015/m3

View Answer  
4
Correct Answer :

2.31*1016/m3


Explanation :
No Explanation available for this question

In a semiconductor of band gap 1.5ev, the wave length of electromagnetic radiation emmited when a conduction band electron combines with a valence band hole is

1.  8282A0

2.  1555A0

3.  6025 A0

4.  None of these

5.  350

6.  425

7.  400

8.  450

View Answer  
8
Correct Answer :

450


Explanation :
No Explanation available for this question

Find the total power absorbed by the resistor in the given circuit.

1.  15W

2.  20W

3.  25W

4.  30W

View Answer  
4
Correct Answer :

15W


Explanation :
No Explanation available for this question

The Work Function qφm in a semiconductor device is required to

1.  Bring an electron from outer world

2.  Remove an electron at Fermi level to Vacuum outside the metal

3.  Both (A) and (B)

4.  None of these

View Answer  
4
Correct Answer :

Remove an electron at Fermi level to Vacuum outside the metal


Explanation :
No Explanation available for this question

In Ge p-n junction at 300k ND=5*1018/cm3 NA=3*616/cm3 N1=1.5*1015/cm3.what is the minority electron density

1.  5000e/cm3

2.  2500e/cm3

3.  4250e/cm3

4.  3750e/cm3

5.  4

6.  9

7.  12

8.  49

View Answer  
8
Correct Answer :

9


Explanation :
No Explanation available for this question

A potencial difference of 5V is applied across a uniform wire of length 50m Calculate the drift velocity of the electron through the wire .Given that the relaxation time is 10-14S

1.  0.176*10-1 ms-1

2.  0.95 ms-1

3.  1.5*10-6 ms-1

4.  None of these

View Answer  
4
Correct Answer :

0.176*10-1 ms-1


Explanation :
No Explanation available for this question

A unit impulse current waveform applied to a two terminal black box produces a voltageWhat will be its voltage if the following current waveform is applied to it

1.  0.5e-t - 0.5e-3t

2.  [0.5e-3t - e-9t]u(t)

3.  0.5e-3t - e-9t

4.  [0.5e-t - 0.5e-3t]u(t)

View Answer  
4
Correct Answer :

[0.5e-t - 0.5e-3t]u(t)


Explanation :
No Explanation available for this question

For what value will be thr average saturation current in a pn junction diode Ge diode that reach90% of ots saturation value at room temperature

1.  0.06V

2.  6V

3.  0.6V

4.  0.0006V

View Answer  
4
Correct Answer :

0.06V


Explanation :
No Explanation available for this question
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