# In the following figure, the absorbed/delivered power thesource is

1.  18watt (delivered)

2.  18watt (absorbed)

3.  Zero watt

4.  None of these

4

18watt (absorbed)

Explanation :
No Explanation available for this question

# An amplifier circuit is shown in the given figure. Assume that the transistor works in active region. The low frequency small signal parameters for the BJT are gm=20mS, β=50, r0=∞, rb=0. What is the AV=V0/Vi of the amplifier

1.  0.967

2.  0.976

3.  0.983

4.  0.998

4

0.967

Explanation :
No Explanation available for this question

# For the circuit shown, the black box contains resistor and independent sources only, the current I is 3A and 1.5A for R=0 and 2ohm respectively. For R=1 ohm, what is the current I

1.  1A

2.  2A

3.  3A

4.  4A

4

2A

Explanation :
No Explanation available for this question

# The quiescent collector current for amplifier shown is

1.  2.6mA

2.  2.3mA

3.  2.1mA

4.  2mA

4

2.3mA

Explanation :
No Explanation available for this question

# For a silicon BJT, the value of RB to establish VCE=2V is (Assume VBE=0.7V)

1.  283K

2.  107K

3.  200K

4.  242K

4

283K

Explanation :
No Explanation available for this question

# The 3 terminal linear voltage regulator is connected to a 10 ohm resistor as shown below. If Vin is 10V, the power dissipated in the transistor is

1.  0.6W

2.  2.4W

3.  4.2W

4.  5.4W

4

2.4W

Explanation :
No Explanation available for this question

# A thin film resistor is to be made of GaAs film doped in n type .the resistor is to have of 2kΩ.the resistor length ts to be and the area is to be 10-6cm2.The doping efficiency is known as 80%.th doping needed is

1.  9.7875*1021ms-1

2.  9.7875*1021ms-1

3.  4.6*1021ms-3

4.  4.6*1015cm-3

4

9.7875*1021ms-1

Explanation :
No Explanation available for this question

# The transistor is operating in

1.  Saturation region

2.  Cut-off region

3.  Reverse active region

4.  Forward active region

4

Forward active region

Explanation :
No Explanation available for this question

# Calculate the drift velocity of free velocity of free electrons in a copper conduction of cross sectional area 105m-5 and in which there is a current density

1.  3.6*10-3ms-1

2.  3.6*10-6ms-1

3.  3.6*103ms-1

4.  Data insufficient

4

3.6*10-3ms-1

Explanation :
No Explanation available for this question

1.  0A

2.  18.2A

3.  26.7A

4.  40A

4