In the following figure, the absorbed/delivered power thesource is

1.  18watt (delivered)

2.  18watt (absorbed)

3.  Zero watt

4.  None of these

View Answer  
4
Correct Answer :

18watt (absorbed)


Explanation :
No Explanation available for this question

An amplifier circuit is shown in the given figure. Assume that the transistor works in active region. The low frequency small signal parameters for the BJT are gm=20mS, β=50, r0=∞, rb=0. What is the AV=V0/Vi of the amplifier

1.  0.967

2.  0.976

3.  0.983

4.  0.998

View Answer  
4
Correct Answer :

0.967


Explanation :
No Explanation available for this question

For the circuit shown, the black box contains resistor and independent sources only, the current I is 3A and 1.5A for R=0 and 2ohm respectively. For R=1 ohm, what is the current I

1.  1A

2.  2A

3.  3A

4.  4A

View Answer  
4
Correct Answer :

2A


Explanation :
No Explanation available for this question

The quiescent collector current for amplifier shown is

1.  2.6mA

2.  2.3mA

3.  2.1mA

4.  2mA

View Answer  
4
Correct Answer :

2.3mA


Explanation :
No Explanation available for this question

For a silicon BJT, the value of RB to establish VCE=2V is (Assume VBE=0.7V)

1.  283K

2.  107K

3.  200K

4.  242K

View Answer  
4
Correct Answer :

283K


Explanation :
No Explanation available for this question

The 3 terminal linear voltage regulator is connected to a 10 ohm resistor as shown below. If Vin is 10V, the power dissipated in the transistor is

1.  0.6W

2.  2.4W

3.  4.2W

4.  5.4W

View Answer  
4
Correct Answer :

2.4W


Explanation :
No Explanation available for this question

A thin film resistor is to be made of GaAs film doped in n type .the resistor is to have of 2kΩ.the resistor length ts to be and the area is to be 10-6cm2.The doping efficiency is known as 80%.th doping needed is

1.  9.7875*1021ms-1

2.  9.7875*1021ms-1

3.  4.6*1021ms-3

4.  4.6*1015cm-3

View Answer  
4
Correct Answer :

9.7875*1021ms-1


Explanation :
No Explanation available for this question

The transistor is operating in

1.  Saturation region

2.  Cut-off region

3.  Reverse active region

4.  Forward active region

View Answer  
4
Correct Answer :

Forward active region


Explanation :
No Explanation available for this question

Calculate the drift velocity of free velocity of free electrons in a copper conduction of cross sectional area 105m-5 and in which there is a current density

1.  3.6*10-3ms-1

2.  3.6*10-6ms-1

3.  3.6*103ms-1

4.  Data insufficient

View Answer  
4
Correct Answer :

3.6*10-3ms-1


Explanation :
No Explanation available for this question

IB in given figure is

1.  0A

2.  18.2A

3.  26.7A

4.  40A

View Answer  
4
Correct Answer :

18.2A


Explanation :
No Explanation available for this question
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