What would be the voltage across 2c at t =∞

1.  0V

2.  10V

3.  (10/3) V

4.  (20/3) V

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4
Correct Answer :

(10/3) V


Explanation :
No Explanation available for this question

For a particular semiconductor at T=300k EG=1.5 ev, mp=10mn and n1=4*1015 cm-3. The position of Fermi level with respect to the band gap center

1.  -0.039ev

2.  0.039ev

3.  -0.0446ev

4.  0.0556ev

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4
Correct Answer :

0.0556ev


Explanation :
No Explanation available for this question

The circuit of an analog CMOS is

1.  

2.  

3.  

4.  None of these

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4
Correct Answer :

None of these


Explanation :
No Explanation available for this question

If L and C both are doubled than damping in above circuit will be

1.  Doubled as compared to previous one

2.  Halved as compared to previous one

3.  remains same

4.  None of these

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4
Correct Answer :

remains same


Explanation :
No Explanation available for this question

In a sample of GaAs at T=200k ,n0=4p0 and Na=0. The value of n0 is

1.  9.86*109 cm-3

2.  7 cm-3

3.  4.86*103 cm-3

4.  2.96cm-3

View Answer  
4
Correct Answer :

2.96cm-3


Explanation :
No Explanation available for this question

A transistor can be used as an amplifier in its

1.   Saturation region

2.  Active region

3.  Both saturation & active region

4.  Cut-off region

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4
Correct Answer :

Active region


Explanation :
No Explanation available for this question

In a Si semiconductor at T=300K , if the acceptor concentration is Na=1013cm-3 and donar concentration is Nd=5*1012 cm-3, then the thermal equilibrium concentration P0 is

1.  2.97*109 cm-3

2.  5*1013 cm-3

3.  2.63*1012cm-3

4.  2.95*1013 cm-3

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4
Correct Answer :

5*1013 cm-3


Explanation :
No Explanation available for this question

The given graph represents a. V-I characteristic of ideal voltage source b. V-I characteristic of ideal current source c. V-I characteristic of practical voltage source D. V-I characteristic of practical current source

1.  Only c

2.  Only d

3.  Both c and d

4.  None of these

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4
Correct Answer :

Only c


Explanation :
No Explanation available for this question

Thermal runway in a transistor is caused by

1.  Increased ICO

2.  Increased IB

3.  Increased IE

4.  None of these

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4
Correct Answer :

Increased ICO


Explanation :
No Explanation available for this question

If L and C both are doubled than damping in above circuit.For=1, roots of the characteristic equation are, whereis damping ratio

1.  Real but not repeated

2.  Real and repeated

3.  Complex but same

4.  Complex conjugates

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4
Correct Answer :

Real and repeated


Explanation :
No Explanation available for this question
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