# What would be the voltage across 2c at t =∞

1.  0V

2.  10V

3.  (10/3) V

4.  (20/3) V

4

(10/3) V

Explanation :
No Explanation available for this question

# For a particular semiconductor at T=300k EG=1.5 ev, mp=10mn and n1=4*1015 cm-3. The position of Fermi level with respect to the band gap center

1.  -0.039ev

2.  0.039ev

3.  -0.0446ev

4.  0.0556ev

4

0.0556ev

Explanation :
No Explanation available for this question

# The circuit of an analog CMOS is

1.

2.

3.

4.  None of these

4

None of these

Explanation :
No Explanation available for this question

# If L and C both are doubled than damping in above circuit will be

1.  Doubled as compared to previous one

2.  Halved as compared to previous one

3.  remains same

4.  None of these

4

remains same

Explanation :
No Explanation available for this question

# In a sample of GaAs at T=200k ,n0=4p0 and Na=0. The value of n0 is

1.  9.86*109 cm-3

2.  7 cm-3

3.  4.86*103 cm-3

4.  2.96cm-3

4

2.96cm-3

Explanation :
No Explanation available for this question

# A transistor can be used as an amplifier in its

1.   Saturation region

2.  Active region

3.  Both saturation & active region

4.  Cut-off region

4

Active region

Explanation :
No Explanation available for this question

# In a Si semiconductor at T=300K , if the acceptor concentration is Na=1013cm-3 and donar concentration is Nd=5*1012 cm-3, then the thermal equilibrium concentration P0 is

1.  2.97*109 cm-3

2.  5*1013 cm-3

3.  2.63*1012cm-3

4.  2.95*1013 cm-3

4

5*1013 cm-3

Explanation :
No Explanation available for this question

# The given graph represents a. V-I characteristic of ideal voltage source b. V-I characteristic of ideal current source c. V-I characteristic of practical voltage source D. V-I characteristic of practical current source

1.  Only c

2.  Only d

3.  Both c and d

4.  None of these

4

Only c

Explanation :
No Explanation available for this question

# Thermal runway in a transistor is caused by

1.  Increased ICO

2.  Increased IB

3.  Increased IE

4.  None of these

4

Increased ICO

Explanation :
No Explanation available for this question

# If L and C both are doubled than damping in above circuit.For=1, roots of the characteristic equation are, whereis damping ratio

1.  Real but not repeated

2.  Real and repeated

3.  Complex but same

4.  Complex conjugates

4