# Diffusion constant and mobility of an electron are related as

1.

2.

3.

4.

4

Explanation :
No Explanation available for this question

# If Vout= 1V for 1 KHz input then what would be Vout for 10 KHz for same input

1.  0.1 V

2.  0.01 V

3.  1 V

4.  None of these

4

1 V

Explanation :
No Explanation available for this question

# For a MOSFET the input resistance is

1.   109-1010

2.  1012-1015

3.  1

4.  100

4

1012-1015

Explanation :
No Explanation available for this question

# If two semiconductor have exactly have exactly same properties expect that the material A has a band gap of 1.5ev and material A has a band gap of 1.7ev, then the ratio of intrinsic concentration of material A to material B at 300 k is

1.  47.5

2.  1048

3.  2016

4.  58.23

4

47.5

Explanation :
No Explanation available for this question

# The value of gmo of JFET (IDSS=8mA, VP=-4V) biased at VGs=-1.8V is

1.   4ms

2.  1 S

3.  4x103 S

4.  Data insufficient

4

4x103 S

Explanation :
No Explanation available for this question

# A FET approximate ac equivalent model is given as

1.

2.

3.

4.  None of these

4

Explanation :
No Explanation available for this question

# The maximum voltage gain that can be achieved from a FET having Yfs=5ms and Yos=20S is

1.  500

2.  -250

3.  100

4.  10

4

-250

Explanation :
No Explanation available for this question

# In Si at T=300k if the Fermi level is0.22ev above valence band , then the value of hole concentration po is

1.  1015 cm-3

2.  2*1015 cm-3

3.  3*1015 cm-3

4.  4*1015 cm-3

4

2*1015 cm-3

Explanation :
No Explanation available for this question

# If a sample of Si at T =300K is doped with boron at the concentration of 2*1013cm-3and with arsenic at a concentration of 1*1013cm_3 then the material is

1.  p-type with p0=1.5*107 cm_3

2.  n-type with p0=1.5*107 cm_3

3.  p-type with p0=1.0*1013 cm_3

4.  p-type with p0=1.0*1013 cm_3

4

p-type with p0=1.0*1013 cm_3

Explanation :
No Explanation available for this question

# In analog CMOS

1.   Enhancement type MOSFET is used

2.  Enhancement type JFET is used

3.  Depletion type MOSFET is used

4.  None of these

4