# If are the mobility constants of electron and holes of Ge & Si respectively at T =270 C, then

1.

2.

3.

4.

4

Explanation :
No Explanation available for this question

# Find the input resistance of the circuit shown below.

1.

2.  R

3.

4.

4

Explanation :
No Explanation available for this question

# Find the concentration of holes in P type Ge at 300K , If conductivity is 100

1.  3.48*1017cm-3

2.  1.838*109cm-3

3.  2.5*1013cm-3

4.  None

4

3.48*1017cm-3

Explanation :
No Explanation available for this question

# In the circuit shown below the effective resistance faced by voltage source is

1.

2.

3.

4.  None of these

4

Explanation :
No Explanation available for this question

# Most stable transistor circuit is

1.  Fixed bias circuit

2.  Emitter stabilized bias circuit

3.  Voltage divider bias circuit

4.  None of these

4

Voltage divider bias circuit

Explanation :
No Explanation available for this question

# The equivalent base resistance of the given circuit is

1.  2.5k

2.  3.55k

3.  3.9k

4.  7.9k

4

3.55k

Explanation :
No Explanation available for this question

# β of a transistor

1.   Decreases with increase of temperature

2.  Increases with increase of temperature

3.  Remains same with increase of temperature

4.  None of these

4

Increases with increase of temperature

Explanation :
No Explanation available for this question

# In a semiconductor the hole diffusion length lp is given by where Dp= diffusion constant and Tp=Mean life time

1.

2.

3.

4.

4

Explanation :
No Explanation available for this question

# What is VAB

1.  6V

2.  10V

3.  25V

4.  40V

4

6V

Explanation :
No Explanation available for this question

# Reverse saturation current in a transistor

1.  Decreases with increase of temperature

2.  Decreases with increase in temperature

3.  Remains same with increase in temperature

4.  None of these

4