# Consider the following circuit: What is the value of R4 in the circuit, if the voltage V- and V+ are to be amplified by the same amplification factor

1.  7kΩ

2.  22kΩ

3.  33kΩ

4.  35kΩ

4

22kΩ

Explanation :
No Explanation available for this question

# In the circuit shown below, the transformers are center tapped and the diodes are connected as shown in a bridge. Between the terminals 1 and 2 an a.c. voltage source of frequency 400Hz is connected, another a.c. voltage of 1.0MHz is connected between 3 and 4. The output between 5 and 6 contains components at

1.  400Hz, 1.0MHz, 1000.4KHz, 999.6KHz

2.  400Hz,1000.4KHz, 999.6KHz

3.  1MHz, 1000.4KHz, 999.6KHz

4.  1000.4KHz, 999.6KHz.

5.

5

1000.4KHz, 999.6KHz.

Explanation :
No Explanation available for this question

# The pole-zero plot given below corresponds to a

1.  Low pass filter

2.  High pass filter

3.  Band pass filter

4.  Notch filter.

4

High pass filter

Explanation :
No Explanation available for this question

# The drain current of a MOSFET in saturation is given by ID= K (VGS –VT) where K is a constant. The magnitude of the trans conductance gm is

1.  K(VGS –VT )2/VDS

2.  2K(VGS –VT)

3.  Id/VGS –VDS

4.  K (VGS –VT) 2/VGS.

4

2K(VGS –VT)

Explanation :
No Explanation available for this question

# Group I gives two possible choices for the impedance Z in the diagram. The circuit elements in Z satisfy the condition R2 C2 >R1 C1. The transfer function V0 / Vi represents a kind of controller. Match the impedances in group I with the types of controllers in group II   Group i Group ii Q. 1.PID controller R 2.lead compensator     3.Lag compensator

1.  Q-1,R-2

2.  Q-1,R-3.

3.  Q-2,R-3

4.  Q-3,R-2.

4

Q-1,R-3.

Explanation :
No Explanation available for this question

# For the circuit shown in the following figure, transistore M1 and M2 are identical NMOS transistors. Assume the M2 is in saturation and the output is unloaded The current IX is related to Ibias  as

1.  Ix = Ibias +Is

2.  Ix = Ibias

3.  Ix = Ibias -Is

4.  Ix= Ibias -[VDD-Vout/RE].

4

Ix = Ibias

Explanation :
No Explanation available for this question

# Consider the following circuit using an ideal OPAMP. The I-V characteristics of the diode is described by the relation I = I0 [ev/vr-1] where VT = 25mV, I0 = 1μA and V is the voltage across the diode (taken as positive for forward bias). For an input voltage VT= -1 V, the output voltage V0 is

1.  0 V

2.  0.1 V

3.  0.7 V

4.  1.1 V

4

0.1 V

Explanation :
No Explanation available for this question

# The OPAMP circuit shown above represents a

1.  High pass filter

2.  Low pass filter

3.  Band pass filtert

4.  Band reject filter.

4

Low pass filter

Explanation :
No Explanation available for this question

# Two identical NMOS transistors M1 and M2 are connected as shown below. Vbias is chosen so that both transistors are in saturation. The equivalent gm of the pair is defined to be at constant Vout The equivalent gm of the pair is

1.  The sum of individual gm’s of the transistors

2.  The product of individual gm’s of the transistors

3.  Nearly equal to the gm of M1

4.  Nearly equal to the gm/g0 of M2.

4

Nearly equal to the gm of M1

Explanation :
No Explanation available for this question

1.  3V to 5V

2.  3V to 6V

3.  3.6V to 6V

4.  3.6V to 5V.

4