1. Increasing channel doping concentration
2. Reducing channel length
3. Reducing gate oxide thickness
4. Decreasing channel doping concentration.
Reducing channel length
1. i, ii, iii
2. iii, ii, i
3. ii, iii, i
4. i, iii, ii.
ii, iii, i
1. Resistor
2. Inductor
3. Capacitor
4. Battery.
Capacitor
1. Collector-emitter terminals shorted
2. Emitter to ground connection open
3. 10 K resistor open
4. Collector –base terminal shorted.
Emitter to ground connection open
1. 790.7 V
2. 395.3 V
3. 280 V
4. 201.3 V.
395.3 V
1. 1.0 V
2. 3.3 V
3. 4.3 V
4. 4.7 V
4.3 V
1. 5 K
2. 10 K?
3. 15 K?
4. 20 K?
10 K?
1. 2.3 mA
2. 3.1 mA
3. 4.6 mA
4. 5.2 mA.
5.2 mA.
1.
2.
3.
4.
1. -40 %
2. -44.57 %
3. -46.57 %
4. -48.0 %.
-44.57 \%