1.  Increasing channel doping concentration

2.  Reducing channel length

3.  Reducing gate oxide thickness

4.  Decreasing channel doping concentration.

4
Correct Answer :

Reducing channel length


Explanation :
No Explanation available for this question

1.  i, ii, iii

2.  iii, ii, i

3.  ii, iii, i

4.  i, iii, ii.

4
Correct Answer :

ii, iii, i


Explanation :
No Explanation available for this question

1.  Resistor

2.  Inductor

3.  Capacitor

4.  Battery.

4
Correct Answer :

Capacitor


Explanation :
No Explanation available for this question

1.  Collector-emitter terminals shorted

2.  Emitter to ground connection open

3.  10 K resistor open

4.  Collector –base terminal shorted.

4
Correct Answer :

Emitter to ground connection open


Explanation :
No Explanation available for this question

1.  790.7 V

2.  395.3 V

3.  280 V

4.  201.3 V.

4
Correct Answer :

395.3 V


Explanation :
No Explanation available for this question

1.  1.0 V

2.  3.3 V

3.  4.3 V

4.  4.7 V

4
Correct Answer :

4.3 V


Explanation :
No Explanation available for this question

1.  2.3 mA

2.  3.1 mA

3.  4.6 mA

4.  5.2 mA.

4
Correct Answer :

5.2 mA.


Explanation :
No Explanation available for this question

1.  

2.  

3.  

4.  

4
Correct Answer :


Explanation :
No Explanation available for this question

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