1. 40 A
2. 50 A
3. 10 A
4. 30 A
40 A
1. 23.8 A
2. 15 A
3. 11.9 A
4. 3.54 A
23.8 A
1. external layers are lightly doped and internal layers are heavily doped
2. external layers are heavily doped and internal layers are lightly doped
3. the p-layers are heavily doped and then n-layers are lightly doped
4. the p-layers are lightly doped and then n-layers are heavily doped.
the p-layers are lightly doped and then n-layers are heavily doped.
1. one resistor across the string
2. resistors of different values across each SCR
3. resistors of the same value across each SCR
4. one resistor in series with the string.
resistors of the same value across each SCR
1. all the three junctions are negatively biased
2. outer junctions are positively biased and the inner junction is negatively biased
3. outer junctions are negatively biased and the inner junction is positively biased
4. the junction near the anode is negatively biased and the one near the cathode is positively biased.
outer junctions are negatively biased and the inner junction is positively biased
1. 1, 2 and 3 are correct
2. 3, 4 and 5 are correct
3. 2, 3 and 4 are correct
4. 1, 3 and 5 are correct
1, 2 and 3 are correct
1. majority carrier device
2. minority carrier device
3. fast recovery diode
4. both a majority and a minority carrier diode
majority carrier device
1. SITs and BJTs
2. IGBTs and MOSFETs
3. Power transformers and silicon transistor
4. Infrared light-emitting diode and a silicon
Infrared light-emitting diode and a silicon
1. Thyristor
2. MOSFET
3. Triac
4. UJT
MOSFET
1. Thyristor
2. G.T.O.
3. Triac
4. MOSFET
MOSFET