1. 5 and 2
2. 4 and 1
3. 259 and 1
4. 260 and 1
259 and 1
No Explanation available for this question
1. m + n
2. m – n
3. mn
4.
No Explanation available for this question
1. similar to CE with linear and saturation region.
2. similar to FET with a linear and pinch off region.
3. similar to tunnel diods in some respects.
4. linear between the peak point and valley point.
similar to tunnel diods in some respects.
No Explanation available for this question
1. 25 V
2. ≥ 18.75V
3. 33.3 V
4. ≥ 19.24 V
≥ 19.24 V
No Explanation available for this question
1. 4.7 ms, 213 Hz
2. 5.64 ms, 177 Hz
3. 3.29 ms, 304 Hz
4. 6.71 ms, 149 Hz
5.64 ms, 177 Hz
No Explanation available for this question
1. 6 mA
2. 18 mA
3. 54 mA
4. 12 mA
6 mA
No Explanation available for this question
1. this injects more electrons into junction J1
2. this increases reverse leakage current into anode
3. hesting of junction is unaffected
4. failure of junctions occurs due to thermal run away
hesting of junction is unaffected
No Explanation available for this question
1. 3 V, 40 mA
2. 0.6 V, 40 mA
3. no limit
4. 3 V, 100 mA
3 V, 40 mA
No Explanation available for this question
1. is 0.7 V
2. is 1 to 1.5 V
3. increases slightly with load current
4. remains constant with load current
increases slightly with load current
No Explanation available for this question
1. L, C, R circuit is for tunning out junction capacitance
2. L, C is intended for filtering out the ripple
3. R, C is called a snubber
4. L is intended to reduce di/dt at switch on.
L is intended to reduce di/dt at switch on.
No Explanation available for this question