A to Z Exams

In n-p-n transistor, in CE configuration:(1)  The emitter is heavily doped than the collector.(2)  Emitter and collector can be interchanged.(3)  The base region is very thin but is heavily doped.(4)  The conventional current flows from base to emitter

An n-p-n transistor power amplifier in C-E configuration gives :

To obtain p-type extrinsic semi- conductor, the impurity element to be added to Germanium should be of valency :

In an n-type semiconductor, the Fermi energy level lies

Consider a p-n junction as a capacitor, formed with p nnd n-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that a n-p-n transistor is working as an amplifier in CE configuration. If C1 and C2 are the base-emitter and collector-emitter junction capacitances , then :

A transistor having a β equal to 80 has a change in base current of 250μA,then the change in collector current is :

Indium impurity in germanium makes it into a

While a collector to emitter voltage is constant in a transistor, the collector current changes by 8.2 mA. When the emitter current changes by 8.3 mA. The value of forward current ratio is:

Which of the following Statements is not correct when a junction diode is in forward bias ?

In a transistor if IC/IE and IC/IB=β.If α varies between 20/21 and 100/101,then the value of β lies between